Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel

Sang Hee K. Park; Chi Sun Hwang; Minki Ryu; Shinhyuk Yang; Chunwon Byun; Jaeheon Shin; Jeong Lk Lee; Kimoon Lee; Min Suk Oh; Seongil Im

doi:10.1002/adma.200801470

Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel

Sang Hee K. Park, Chi Sun Hwang, Minki Ryu, Shinhyuk Yang, Chunwon Byun, Jaeheon Shin, Jeong Lk Lee, Kimoon Lee, Min Suk Oh, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

208 Citations (Scopus)

Abstract

Photo and electrically stable transparent ZnO Thin Film Transistors (TFT) for an Active Matrix- Organic Light Emitting Diode (AM-OLED) panel was fabricated. The fabrication of a bottom emission AM-OLED back panel with a transparent ZnO-TFT array, 150 NM thick Indium-Tin-Oxide (ITO) glass was used for the substrate. A 20 nm thick ZnO semiconductor film was deposited by means of plasma assisted atomic layer deposition (PEALD), after source/drain patterning of ITO by wet etching. Trimethylaluminium (TMA) was used as an Al precursor in all the ALD experiments. The electrically table ZnO-TTFT showed quite good photo-stability and full transparent ZnO-TFT array demonstrates a successful operation of a 2.5 inch sized bottom emission AM-blue OLED panel. ZnO-TTFT with a water-vapor precursor processed Al₂O₃ dielectric is very effective as a driver for an efficient AM-OLED display.

Original language	English
Pages (from-to)	678-682
Number of pages	5
Journal	Advanced Materials
Volume	21
Issue number	6
DOIs	https://doi.org/10.1002/adma.200801470
Publication status	Published - 2009 Feb 9

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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title = "Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel",

abstract = "Photo and electrically stable transparent ZnO Thin Film Transistors (TFT) for an Active Matrix- Organic Light Emitting Diode (AM-OLED) panel was fabricated. The fabrication of a bottom emission AM-OLED back panel with a transparent ZnO-TFT array, 150 NM thick Indium-Tin-Oxide (ITO) glass was used for the substrate. A 20 nm thick ZnO semiconductor film was deposited by means of plasma assisted atomic layer deposition (PEALD), after source/drain patterning of ITO by wet etching. Trimethylaluminium (TMA) was used as an Al precursor in all the ALD experiments. The electrically table ZnO-TTFT showed quite good photo-stability and full transparent ZnO-TFT array demonstrates a successful operation of a 2.5 inch sized bottom emission AM-blue OLED panel. ZnO-TTFT with a water-vapor precursor processed Al2O3 dielectric is very effective as a driver for an efficient AM-OLED display.",

author = "Park, {Sang Hee K.} and Hwang, {Chi Sun} and Minki Ryu and Shinhyuk Yang and Chunwon Byun and Jaeheon Shin and Lee, {Jeong Lk} and Kimoon Lee and Oh, {Min Suk} and Seongil Im",

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doi = "10.1002/adma.200801470",

language = "English",

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AU - Park, Sang Hee K.

AU - Hwang, Chi Sun

AU - Ryu, Minki

AU - Yang, Shinhyuk

AU - Byun, Chunwon

AU - Shin, Jaeheon

AU - Lee, Jeong Lk

AU - Lee, Kimoon

AU - Oh, Min Suk

AU - Im, Seongil

PY - 2009/2/9

Y1 - 2009/2/9

N2 - Photo and electrically stable transparent ZnO Thin Film Transistors (TFT) for an Active Matrix- Organic Light Emitting Diode (AM-OLED) panel was fabricated. The fabrication of a bottom emission AM-OLED back panel with a transparent ZnO-TFT array, 150 NM thick Indium-Tin-Oxide (ITO) glass was used for the substrate. A 20 nm thick ZnO semiconductor film was deposited by means of plasma assisted atomic layer deposition (PEALD), after source/drain patterning of ITO by wet etching. Trimethylaluminium (TMA) was used as an Al precursor in all the ALD experiments. The electrically table ZnO-TTFT showed quite good photo-stability and full transparent ZnO-TFT array demonstrates a successful operation of a 2.5 inch sized bottom emission AM-blue OLED panel. ZnO-TTFT with a water-vapor precursor processed Al2O3 dielectric is very effective as a driver for an efficient AM-OLED display.

AB - Photo and electrically stable transparent ZnO Thin Film Transistors (TFT) for an Active Matrix- Organic Light Emitting Diode (AM-OLED) panel was fabricated. The fabrication of a bottom emission AM-OLED back panel with a transparent ZnO-TFT array, 150 NM thick Indium-Tin-Oxide (ITO) glass was used for the substrate. A 20 nm thick ZnO semiconductor film was deposited by means of plasma assisted atomic layer deposition (PEALD), after source/drain patterning of ITO by wet etching. Trimethylaluminium (TMA) was used as an Al precursor in all the ALD experiments. The electrically table ZnO-TTFT showed quite good photo-stability and full transparent ZnO-TFT array demonstrates a successful operation of a 2.5 inch sized bottom emission AM-blue OLED panel. ZnO-TTFT with a water-vapor precursor processed Al2O3 dielectric is very effective as a driver for an efficient AM-OLED display.

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Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel

Abstract

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