Transparent AMOLED display driven by hafnium-indium-zinc oxide thin film transistor array

Tae Sang Kim; Joon Seok Park; Kyoung Seok Son; Ji Sim Jung; Kwang Hee Lee; Wan Joo Maeng; Hyun Suk Kim; Jang Yeon Kwon; Bonwon Koo; Sangyun Lee

doi:10.1016/j.cap.2011.03.031

Transparent AMOLED display driven by hafnium-indium-zinc oxide thin film transistor array

Tae Sang Kim, Joon Seok Park, Kyoung Seok Son, Ji Sim Jung, Kwang Hee Lee, Wan Joo Maeng, Hyun Suk Kim, Jang Yeon Kwon, Bonwon Koo, Sangyun Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The fabrication and electrical characteristics of transparent hafnium-indium-zinc oxide (HIZO) thin film transistors (TFTs) are presented in detail. The devices incorporate an etch stopper structure, which may consist of either a single SiO_x layer deposited by plasma enhanced chemical vapor deposition (PECVD) at 150 °C, or a dual stack of SiO_x layers grown at 150 °C and 350 °C. The electrical properties suggest that the latter is more effective at protecting the underlying oxide semiconductor in the course of source-drain etching, hence resulting in high performance transparent TFTs. The saturation mobility and the subthreshold swing of the transparent HIZO TFTs fabricated with the dual etch stopper are 7.6 cm²/Vs and 0.30 V/decade, respectively. A 4-inch QVGA (320 × 240) transparent active matrix organic light emitting diode (AMOLED) display was realized using a backplane array of the above TFTs.

Original language	English
Pages (from-to)	1253-1256
Number of pages	4
Journal	Current Applied Physics
Volume	11
Issue number	5
DOIs	https://doi.org/10.1016/j.cap.2011.03.031
Publication status	Published - 2011 Sept

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2011.03.031

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title = "Transparent AMOLED display driven by hafnium-indium-zinc oxide thin film transistor array",

abstract = "The fabrication and electrical characteristics of transparent hafnium-indium-zinc oxide (HIZO) thin film transistors (TFTs) are presented in detail. The devices incorporate an etch stopper structure, which may consist of either a single SiOx layer deposited by plasma enhanced chemical vapor deposition (PECVD) at 150 °C, or a dual stack of SiOx layers grown at 150 °C and 350 °C. The electrical properties suggest that the latter is more effective at protecting the underlying oxide semiconductor in the course of source-drain etching, hence resulting in high performance transparent TFTs. The saturation mobility and the subthreshold swing of the transparent HIZO TFTs fabricated with the dual etch stopper are 7.6 cm2/Vs and 0.30 V/decade, respectively. A 4-inch QVGA (320 × 240) transparent active matrix organic light emitting diode (AMOLED) display was realized using a backplane array of the above TFTs.",

author = "Kim, {Tae Sang} and Park, {Joon Seok} and Son, {Kyoung Seok} and Jung, {Ji Sim} and Lee, {Kwang Hee} and Maeng, {Wan Joo} and Kim, {Hyun Suk} and Kwon, {Jang Yeon} and Bonwon Koo and Sangyun Lee",

year = "2011",

month = sep,

doi = "10.1016/j.cap.2011.03.031",

language = "English",

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AU - Kim, Tae Sang

AU - Park, Joon Seok

AU - Son, Kyoung Seok

AU - Jung, Ji Sim

AU - Lee, Kwang Hee

AU - Maeng, Wan Joo

AU - Kim, Hyun Suk

AU - Kwon, Jang Yeon

AU - Koo, Bonwon

AU - Lee, Sangyun

PY - 2011/9

Y1 - 2011/9

N2 - The fabrication and electrical characteristics of transparent hafnium-indium-zinc oxide (HIZO) thin film transistors (TFTs) are presented in detail. The devices incorporate an etch stopper structure, which may consist of either a single SiOx layer deposited by plasma enhanced chemical vapor deposition (PECVD) at 150 °C, or a dual stack of SiOx layers grown at 150 °C and 350 °C. The electrical properties suggest that the latter is more effective at protecting the underlying oxide semiconductor in the course of source-drain etching, hence resulting in high performance transparent TFTs. The saturation mobility and the subthreshold swing of the transparent HIZO TFTs fabricated with the dual etch stopper are 7.6 cm2/Vs and 0.30 V/decade, respectively. A 4-inch QVGA (320 × 240) transparent active matrix organic light emitting diode (AMOLED) display was realized using a backplane array of the above TFTs.

AB - The fabrication and electrical characteristics of transparent hafnium-indium-zinc oxide (HIZO) thin film transistors (TFTs) are presented in detail. The devices incorporate an etch stopper structure, which may consist of either a single SiOx layer deposited by plasma enhanced chemical vapor deposition (PECVD) at 150 °C, or a dual stack of SiOx layers grown at 150 °C and 350 °C. The electrical properties suggest that the latter is more effective at protecting the underlying oxide semiconductor in the course of source-drain etching, hence resulting in high performance transparent TFTs. The saturation mobility and the subthreshold swing of the transparent HIZO TFTs fabricated with the dual etch stopper are 7.6 cm2/Vs and 0.30 V/decade, respectively. A 4-inch QVGA (320 × 240) transparent active matrix organic light emitting diode (AMOLED) display was realized using a backplane array of the above TFTs.

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Transparent AMOLED display driven by hafnium-indium-zinc oxide thin film transistor array

Abstract

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