Two types of transition metal dichalcogenide (TMD) transistors are applied to demonstrate their possibility as switching/driving elements for the pixel of organic light-emitting diode (OLED) display. Such TMD materials are 6 nm thin WSe2 and MoS2 as a p-type and n-type channel, respectively, and the pixel is thus composed of external green OLED and nanoscale thin channel field effect transistors (FETs) for switching and driving. The maximum mobility of WSe2-FETs either as switch or as driver is ≈30 cm2 V−1 s−1, in linear regime of the gate voltage sweep range. Digital (ON/OFF-switching) and gray-scale analogue operations of OLED pixel are nicely demonstrated. MoS2 nanosheet FET-based pixel is also demonstrated, although limited to alternating gray scale operation of OLED. Device stability issue is still remaining for future study but TMD channel FETs are very promising and novel for their applications to OLED pixel because of their high mobility and ID ON/OFF ratio.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from NRF (NRL program: Grant No. 2014R1A2A1A01004815), Ministry of Trade, Industry and Energy (the Global Leading Technology Program: Grant No. 10042433-2012-11), Nano-Materials Technology Development Program (Grant No. 2012M3A7B4034985), the Yonsei University (Future-Leading Research Initiative of 2014: Grant No. 2014-22-0168), Creative Materials Discovery Program through NRF funded by the Ministry of Science, ICT and Future Planning (Grant No. 2015M3D1A1068061).
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Science(all)