Tradeoff between hot carrier and negative bias temperature degradations in high-performance Si1 - XGex pMOSFETs with high-κ/metal gate stacks

Won Ho Choi; Chang Young Kang; Jung Woo Oh; Byoung Hun Lee; Prashant Majhi; Hyuk Min Kwon; Raj Jammy; Ga Won Lee; Hi Deok Lee

doi:10.1109/LED.2010.2071851

Tradeoff between hot carrier and negative bias temperature degradations in high-performance Si_{1 - X}Ge_x pMOSFETs with high-κ/metal gate stacks

Won Ho Choi, Chang Young Kang, Jung Woo Oh, Byoung Hun Lee, Prashant Majhi, Hyuk Min Kwon, Raj Jammy, Ga Won Lee, Hi Deok Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Analyzed herein is the effect of different germanium (Ge) concentrations on negative bias temperature instability (NBTI) and channel hot carrier (CHC) degradations in high-performance Si_{1 - x}Ge_x pMOSFETs. It is shown that higher concentrations result in less NBTI degradation due to the increased barrier height between the SiGe and high- κ dielectric interface, but it causes greater CHC degradation due to the decreased channel bandgap with higher Ge concentrations. Therefore, the tradeoff between NBTI and HC degradations for different Ge concentrations should be considered when developing high-performance Si_{1 - x}Ge_x pMOSFETs.

Original language	English
Article number	5595487
Pages (from-to)	1211-1213
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	11
DOIs	https://doi.org/10.1109/LED.2010.2071851
Publication status	Published - 2010 Nov

Bibliographical note

Funding Information:
Manuscript received April 18, 2010; revised August 10, 2010; accepted August 22, 2010. Date of publication October 7, 2010; date of current version October 22, 2010. This work was supported in part by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) under Grant KRF-2007-612-D00107 and in part by the Ministry of Knowledge Economy and the Korea Institute for Advancement in Technology through the Workforce Development Program in Strategic Technology. The review of this letter was arranged by Editor C.-P. Chang.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2010.2071851

Cite this

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title = "Tradeoff between hot carrier and negative bias temperature degradations in high-performance Si1 - XGex pMOSFETs with high-κ/metal gate stacks",

abstract = "Analyzed herein is the effect of different germanium (Ge) concentrations on negative bias temperature instability (NBTI) and channel hot carrier (CHC) degradations in high-performance Si1 - xGex pMOSFETs. It is shown that higher concentrations result in less NBTI degradation due to the increased barrier height between the SiGe and high- κ dielectric interface, but it causes greater CHC degradation due to the decreased channel bandgap with higher Ge concentrations. Therefore, the tradeoff between NBTI and HC degradations for different Ge concentrations should be considered when developing high-performance Si1 - xGex pMOSFETs.",

author = "Choi, {Won Ho} and Kang, {Chang Young} and Oh, {Jung Woo} and Lee, {Byoung Hun} and Prashant Majhi and Kwon, {Hyuk Min} and Raj Jammy and Lee, {Ga Won} and Lee, {Hi Deok}",

note = "Funding Information: Manuscript received April 18, 2010; revised August 10, 2010; accepted August 22, 2010. Date of publication October 7, 2010; date of current version October 22, 2010. This work was supported in part by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) under Grant KRF-2007-612-D00107 and in part by the Ministry of Knowledge Economy and the Korea Institute for Advancement in Technology through the Workforce Development Program in Strategic Technology. The review of this letter was arranged by Editor C.-P. Chang.",

year = "2010",

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doi = "10.1109/LED.2010.2071851",

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AU - Choi, Won Ho

AU - Kang, Chang Young

AU - Oh, Jung Woo

AU - Lee, Byoung Hun

AU - Majhi, Prashant

AU - Kwon, Hyuk Min

AU - Jammy, Raj

AU - Lee, Ga Won

AU - Lee, Hi Deok

N1 - Funding Information: Manuscript received April 18, 2010; revised August 10, 2010; accepted August 22, 2010. Date of publication October 7, 2010; date of current version October 22, 2010. This work was supported in part by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) under Grant KRF-2007-612-D00107 and in part by the Ministry of Knowledge Economy and the Korea Institute for Advancement in Technology through the Workforce Development Program in Strategic Technology. The review of this letter was arranged by Editor C.-P. Chang.

PY - 2010/11

Y1 - 2010/11

N2 - Analyzed herein is the effect of different germanium (Ge) concentrations on negative bias temperature instability (NBTI) and channel hot carrier (CHC) degradations in high-performance Si1 - xGex pMOSFETs. It is shown that higher concentrations result in less NBTI degradation due to the increased barrier height between the SiGe and high- κ dielectric interface, but it causes greater CHC degradation due to the decreased channel bandgap with higher Ge concentrations. Therefore, the tradeoff between NBTI and HC degradations for different Ge concentrations should be considered when developing high-performance Si1 - xGex pMOSFETs.

AB - Analyzed herein is the effect of different germanium (Ge) concentrations on negative bias temperature instability (NBTI) and channel hot carrier (CHC) degradations in high-performance Si1 - xGex pMOSFETs. It is shown that higher concentrations result in less NBTI degradation due to the increased barrier height between the SiGe and high- κ dielectric interface, but it causes greater CHC degradation due to the decreased channel bandgap with higher Ge concentrations. Therefore, the tradeoff between NBTI and HC degradations for different Ge concentrations should be considered when developing high-performance Si1 - xGex pMOSFETs.

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