Abstract
The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.
| Original language | English |
|---|---|
| Title of host publication | Ultra Clean Processing of Semiconductor Surfaces XIV |
| Editors | Paul Mertens, Marc Meuris, Marc Meuris, Marc Heyns |
| Publisher | Trans Tech Publications Ltd |
| Pages | 39-42 |
| Number of pages | 4 |
| ISBN (Print) | 9783035714173 |
| DOIs | |
| Publication status | Published - 2018 |
| Event | 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium Duration: 2018 Sept 3 → 2018 Sept 5 |
Publication series
| Name | Solid State Phenomena |
|---|---|
| Volume | 282 SSP |
| ISSN (Print) | 1012-0394 |
| ISSN (Electronic) | 1662-9779 |
Other
| Other | 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 |
|---|---|
| Country/Territory | Belgium |
| City | Leuven |
| Period | 18/9/3 → 18/9/5 |
Bibliographical note
Publisher Copyright:© 2018 Trans Tech Publications, Switzerland.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics