Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation

Atiye Pezeshki; Seyed Hossein Hosseini Shokouh; Syed Raza Ali Raza; Jin Sung Kim; Sung Wook Min; Iman Shackery; Seong Chan Jun; Seongil Im

doi:10.1039/c4tc01673d

Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation

Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Syed Raza Ali Raza, Jin Sung Kim, Sung Wook Min, Iman Shackery, Seong Chan Jun, Seongil Im

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

We demonstrate an inverter type nanodevice based on 2-dimensional semiconducting molybdenum disulfide (MoS₂) nanoflakes. The inverter device was comprised of back-gate and top-gate field-effect transistors (FETs) which work respectively as a load and a driver for a logic inverter in the dark but switch their roles for photo-inverter operation. Our logic inverter shows a relatively high voltage gain of more than 12. When the back-gate FET controls the circuit as a driver to sensitively detect visible light using its open channel, the device effectively operates as a photo-inverter detecting visible photons. Our inverter based on top- and back-gate MoS₂ FETs would be quite promising for both logic and photo-sensing applications due to its performance and simple device configuration as well.

Original language	English
Pages (from-to)	8023-8028
Number of pages	6
Journal	Journal of Materials Chemistry C
Volume	2
Issue number	38
DOIs	https://doi.org/10.1039/c4tc01673d
Publication status	Published - 2014 Oct 14

Bibliographical note

Publisher Copyright:
© the Partner Organisations 2014.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Chemistry

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10.1039/c4tc01673d

Cite this

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title = "Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation",

abstract = "We demonstrate an inverter type nanodevice based on 2-dimensional semiconducting molybdenum disulfide (MoS2) nanoflakes. The inverter device was comprised of back-gate and top-gate field-effect transistors (FETs) which work respectively as a load and a driver for a logic inverter in the dark but switch their roles for photo-inverter operation. Our logic inverter shows a relatively high voltage gain of more than 12. When the back-gate FET controls the circuit as a driver to sensitively detect visible light using its open channel, the device effectively operates as a photo-inverter detecting visible photons. Our inverter based on top- and back-gate MoS2 FETs would be quite promising for both logic and photo-sensing applications due to its performance and simple device configuration as well.",

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AU - Pezeshki, Atiye

AU - Hosseini Shokouh, Seyed Hossein

AU - Raza, Syed Raza Ali

AU - Kim, Jin Sung

AU - Min, Sung Wook

AU - Shackery, Iman

AU - Jun, Seong Chan

AU - Im, Seongil

PY - 2014/10/14

Y1 - 2014/10/14

N2 - We demonstrate an inverter type nanodevice based on 2-dimensional semiconducting molybdenum disulfide (MoS2) nanoflakes. The inverter device was comprised of back-gate and top-gate field-effect transistors (FETs) which work respectively as a load and a driver for a logic inverter in the dark but switch their roles for photo-inverter operation. Our logic inverter shows a relatively high voltage gain of more than 12. When the back-gate FET controls the circuit as a driver to sensitively detect visible light using its open channel, the device effectively operates as a photo-inverter detecting visible photons. Our inverter based on top- and back-gate MoS2 FETs would be quite promising for both logic and photo-sensing applications due to its performance and simple device configuration as well.

AB - We demonstrate an inverter type nanodevice based on 2-dimensional semiconducting molybdenum disulfide (MoS2) nanoflakes. The inverter device was comprised of back-gate and top-gate field-effect transistors (FETs) which work respectively as a load and a driver for a logic inverter in the dark but switch their roles for photo-inverter operation. Our logic inverter shows a relatively high voltage gain of more than 12. When the back-gate FET controls the circuit as a driver to sensitively detect visible light using its open channel, the device effectively operates as a photo-inverter detecting visible photons. Our inverter based on top- and back-gate MoS2 FETs would be quite promising for both logic and photo-sensing applications due to its performance and simple device configuration as well.

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Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation

Abstract

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