Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique: Renormalization and screening

Joo In Lee; Hyung Gyoo Lee; Eun Joo Shin; Sungkyu Yu; Kasi Viswanath; Dongho Kim; Gukhyung Ihm

doi:10.1016/s0921-5107(97)00244-4

Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique: Renormalization and screening

Joo In Lee, Hyung Gyoo Lee, Eun Joo Shin, Sungkyu Yu, Kasi Viswanath, Dongho Kim, Gukhyung Ihm

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the emission peaks on the QDs with various modulation-doping concentrations, demonstrating that exchange interactions of electrons within single states have no effect on renormalization. Screening due to the electrons at modulation-doped layer as well as the photo-generated carriers in GaAs matrix plays an important role in reducing the radiative recombination rate.

Original language	English
Pages (from-to)	122-126
Number of pages	5
Journal	Materials Science and Engineering B
Volume	51
Issue number	1-3
DOIs	https://doi.org/10.1016/s0921-5107(97)00244-4
Publication status	Published - 1998 Feb 27

Bibliographical note

Funding Information:
This work was supported financially by the Ministry of Science and Technology. One of the authors (Hyung Gyoo Lee) acknowledges financial support from the Non-directed Research Fund under National Special Support Project (#95-F32) of Chungbuk National University, and the Ministry of Education under contact no. BSRI-96-2435.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

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title = "Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique: Renormalization and screening",

abstract = "We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the emission peaks on the QDs with various modulation-doping concentrations, demonstrating that exchange interactions of electrons within single states have no effect on renormalization. Screening due to the electrons at modulation-doped layer as well as the photo-generated carriers in GaAs matrix plays an important role in reducing the radiative recombination rate.",

author = "Lee, {Joo In} and Lee, {Hyung Gyoo} and Shin, {Eun Joo} and Sungkyu Yu and Kasi Viswanath and Dongho Kim and Gukhyung Ihm",

note = "Funding Information: This work was supported financially by the Ministry of Science and Technology. One of the authors (Hyung Gyoo Lee) acknowledges financial support from the Non-directed Research Fund under National Special Support Project (#95-F32) of Chungbuk National University, and the Ministry of Education under contact no. BSRI-96-2435.",

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doi = "10.1016/s0921-5107(97)00244-4",

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T1 - Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique

T2 - Renormalization and screening

AU - Lee, Joo In

AU - Lee, Hyung Gyoo

AU - Shin, Eun Joo

AU - Yu, Sungkyu

AU - Viswanath, Kasi

AU - Kim, Dongho

AU - Ihm, Gukhyung

N1 - Funding Information: This work was supported financially by the Ministry of Science and Technology. One of the authors (Hyung Gyoo Lee) acknowledges financial support from the Non-directed Research Fund under National Special Support Project (#95-F32) of Chungbuk National University, and the Ministry of Education under contact no. BSRI-96-2435.

PY - 1998/2/27

Y1 - 1998/2/27

N2 - We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the emission peaks on the QDs with various modulation-doping concentrations, demonstrating that exchange interactions of electrons within single states have no effect on renormalization. Screening due to the electrons at modulation-doped layer as well as the photo-generated carriers in GaAs matrix plays an important role in reducing the radiative recombination rate.

AB - We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the emission peaks on the QDs with various modulation-doping concentrations, demonstrating that exchange interactions of electrons within single states have no effect on renormalization. Screening due to the electrons at modulation-doped layer as well as the photo-generated carriers in GaAs matrix plays an important role in reducing the radiative recombination rate.

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ER -

Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique: Renormalization and screening

Abstract

Bibliographical note

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