We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the emission peaks on the QDs with various modulation-doping concentrations, demonstrating that exchange interactions of electrons within single states have no effect on renormalization. Screening due to the electrons at modulation-doped layer as well as the photo-generated carriers in GaAs matrix plays an important role in reducing the radiative recombination rate.
|Number of pages||5|
|Journal||Materials Science and Engineering B|
|Publication status||Published - 1998 Feb 27|
Bibliographical noteFunding Information:
This work was supported financially by the Ministry of Science and Technology. One of the authors (Hyung Gyoo Lee) acknowledges financial support from the Non-directed Research Fund under National Special Support Project (#95-F32) of Chungbuk National University, and the Ministry of Education under contact no. BSRI-96-2435.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering