Abstract
The low thermal conductivity of mesoporous structures, due to the pores acting as phonon scattering centers, allows their use in thermoelectric devices. However, high Seebeck coefficient and electrical conductivity and low thermal conductivity are required to enhance their thermoelectric properties. In this study, Ti-doped mesoporous ZnO thin films with various Ti concentrations were fabricated and analyzed. When increasing the Ti dopant concentration up to 1.5 at%, the crystallinity and pore structure of the doped films remained almost unchanged, their porosity and thickness slightly increased, the electrical conductivity was also enhanced due to the increased carrier concentration, and the Seebeck coefficient decreased. These Ti doping-induced increase in electrical conductivity and decrease in Seebeck coefficient led to an increase of almost 1.5 times in the power factor of the mesoporous ZnO thin films.
| Original language | English |
|---|---|
| Article number | 121757 |
| Journal | Materials Chemistry and Physics |
| Volume | 235 |
| DOIs | |
| Publication status | Published - 2019 Sept 1 |
Bibliographical note
Funding Information:This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) and funded by the Ministry of Education (NRF- 2015R1D1A1A02062229 ). This work was also supported by the ‘ Korea-Africa Joint Research Programme ’ grant funded by the Korean government (Ministry of Science, Technology & ICT : 2017K1A3A1A09085891 ). This work was supported by the Human Resources Development program (No. 20174030201720 ) of the Korea Institute of Energy Technology Evaluation and Planning grant funded by the Korea government Ministry of Trade, Industry and Energy .
Publisher Copyright:
© 2019 Elsevier B.V.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics