Ti-doped alumina based reliable resistive switching in sub-μ A regime

Dong Kyu Lee; Gun Hwan Kim; Hyunchul Sohn; Min Kyu Yang

doi:10.1063/5.0011310

Ti-doped alumina based reliable resistive switching in sub-μ A regime

Dong Kyu Lee, Gun Hwan Kim, Hyunchul Sohn, Min Kyu Yang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigated the low current resistive switching behavior using Ti-doped Al2O3 and sub-stoichiometric TaOx layers. The optimized concentrations of Ti and O in each Al2O3 and TaOx layer can make the resistive switching device show the stable retention characteristic and 3-bit operation in the current regime under 1 μA. Doped Ti in the Al2O3 layer generated oxygen vacancies to facilitate fluent resistive switching, and the TaOx layer with an appropriate oxygen concentration played the role of an oxygen reservoir and load resistance for reliable retention and electric pulse compatible characteristics, respectively. We presented the materials optimization processes and comparative resistive switching characteristics in detail.

Original language	English
Article number	213503
Journal	Applied Physics Letters
Volume	116
Issue number	21
DOIs	https://doi.org/10.1063/5.0011310
Publication status	Published - 2020 May 26

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant, funded by the Korea Government (MSIT No. NRF-2019R1F1A1060272).

Publisher Copyright:
© 2020 Author(s).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/5.0011310

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title = "Ti-doped alumina based reliable resistive switching in sub-μ A regime",

abstract = "We investigated the low current resistive switching behavior using Ti-doped Al2O3 and sub-stoichiometric TaOx layers. The optimized concentrations of Ti and O in each Al2O3 and TaOx layer can make the resistive switching device show the stable retention characteristic and 3-bit operation in the current regime under 1 μA. Doped Ti in the Al2O3 layer generated oxygen vacancies to facilitate fluent resistive switching, and the TaOx layer with an appropriate oxygen concentration played the role of an oxygen reservoir and load resistance for reliable retention and electric pulse compatible characteristics, respectively. We presented the materials optimization processes and comparative resistive switching characteristics in detail.",

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AU - Lee, Dong Kyu

AU - Kim, Gun Hwan

AU - Sohn, Hyunchul

AU - Yang, Min Kyu

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant, funded by the Korea Government (MSIT No. NRF-2019R1F1A1060272). Publisher Copyright: © 2020 Author(s).

PY - 2020/5/26

Y1 - 2020/5/26

N2 - We investigated the low current resistive switching behavior using Ti-doped Al2O3 and sub-stoichiometric TaOx layers. The optimized concentrations of Ti and O in each Al2O3 and TaOx layer can make the resistive switching device show the stable retention characteristic and 3-bit operation in the current regime under 1 μA. Doped Ti in the Al2O3 layer generated oxygen vacancies to facilitate fluent resistive switching, and the TaOx layer with an appropriate oxygen concentration played the role of an oxygen reservoir and load resistance for reliable retention and electric pulse compatible characteristics, respectively. We presented the materials optimization processes and comparative resistive switching characteristics in detail.

AB - We investigated the low current resistive switching behavior using Ti-doped Al2O3 and sub-stoichiometric TaOx layers. The optimized concentrations of Ti and O in each Al2O3 and TaOx layer can make the resistive switching device show the stable retention characteristic and 3-bit operation in the current regime under 1 μA. Doped Ti in the Al2O3 layer generated oxygen vacancies to facilitate fluent resistive switching, and the TaOx layer with an appropriate oxygen concentration played the role of an oxygen reservoir and load resistance for reliable retention and electric pulse compatible characteristics, respectively. We presented the materials optimization processes and comparative resistive switching characteristics in detail.

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Ti-doped alumina based reliable resistive switching in sub-μ A regime

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