Threshold voltage control of Amorphous gallium indium zinc oxide TFTs by suppressing back-channel current

Kyoung Seok Son; Tae Sang Kim; Ji Sim Jung; Myung Kwan Ryu; Kyung Bae Park; Byung Wook Yoo; Keechan Park; Jang Yeon Kwon; Sang Yoon Lee; Jong Min Kim

doi:10.1149/1.3020766

Threshold voltage control of Amorphous gallium indium zinc oxide TFTs by suppressing back-channel current

Kyoung Seok Son, Tae Sang Kim, Ji Sim Jung, Myung Kwan Ryu, Kyung Bae Park, Byung Wook Yoo, Keechan Park, Jang Yeon Kwon, Sang Yoon Lee, Jong Min Kim

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

Effects of plasma treatments on the back-channel of amorphous Ga2 O3 - In2 O3 -ZnO (GIZO) thin film transistors (TFTs) are compared for N2 and N2 O plasma. Acceptor-like states originating from the oxygen adsorbed on the back-channel of the GIZO TFTs suppress the back-channel current by capturing the electrons in the GIZO active layer and thus shift the threshold voltage to the positive direction. It is also shown that the oxygen in a silicon oxide passivation layer reduces the back-channel current. An enhancement-mode GIZO TFT has been successfully fabricated by combining the N2 O plasma treatment and the silicon oxide passivation layer.

Original language	English
Pages (from-to)	H26-H28
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	1
DOIs	https://doi.org/10.1149/1.3020766
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3020766

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title = "Threshold voltage control of Amorphous gallium indium zinc oxide TFTs by suppressing back-channel current",

abstract = "Effects of plasma treatments on the back-channel of amorphous Ga2 O3 - In2 O3 -ZnO (GIZO) thin film transistors (TFTs) are compared for N2 and N2 O plasma. Acceptor-like states originating from the oxygen adsorbed on the back-channel of the GIZO TFTs suppress the back-channel current by capturing the electrons in the GIZO active layer and thus shift the threshold voltage to the positive direction. It is also shown that the oxygen in a silicon oxide passivation layer reduces the back-channel current. An enhancement-mode GIZO TFT has been successfully fabricated by combining the N2 O plasma treatment and the silicon oxide passivation layer.",

author = "Son, {Kyoung Seok} and Kim, {Tae Sang} and Jung, {Ji Sim} and Ryu, {Myung Kwan} and Park, {Kyung Bae} and Yoo, {Byung Wook} and Keechan Park and Kwon, {Jang Yeon} and Lee, {Sang Yoon} and Kim, {Jong Min}",

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doi = "10.1149/1.3020766",

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journal = "Electrochemical and Solid-State Letters",

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T1 - Threshold voltage control of Amorphous gallium indium zinc oxide TFTs by suppressing back-channel current

AU - Son, Kyoung Seok

AU - Kim, Tae Sang

AU - Jung, Ji Sim

AU - Ryu, Myung Kwan

AU - Park, Kyung Bae

AU - Yoo, Byung Wook

AU - Park, Keechan

AU - Kwon, Jang Yeon

AU - Lee, Sang Yoon

AU - Kim, Jong Min

PY - 2008

Y1 - 2008

N2 - Effects of plasma treatments on the back-channel of amorphous Ga2 O3 - In2 O3 -ZnO (GIZO) thin film transistors (TFTs) are compared for N2 and N2 O plasma. Acceptor-like states originating from the oxygen adsorbed on the back-channel of the GIZO TFTs suppress the back-channel current by capturing the electrons in the GIZO active layer and thus shift the threshold voltage to the positive direction. It is also shown that the oxygen in a silicon oxide passivation layer reduces the back-channel current. An enhancement-mode GIZO TFT has been successfully fabricated by combining the N2 O plasma treatment and the silicon oxide passivation layer.

AB - Effects of plasma treatments on the back-channel of amorphous Ga2 O3 - In2 O3 -ZnO (GIZO) thin film transistors (TFTs) are compared for N2 and N2 O plasma. Acceptor-like states originating from the oxygen adsorbed on the back-channel of the GIZO TFTs suppress the back-channel current by capturing the electrons in the GIZO active layer and thus shift the threshold voltage to the positive direction. It is also shown that the oxygen in a silicon oxide passivation layer reduces the back-channel current. An enhancement-mode GIZO TFT has been successfully fabricated by combining the N2 O plasma treatment and the silicon oxide passivation layer.

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Threshold voltage control of Amorphous gallium indium zinc oxide TFTs by suppressing back-channel current

Abstract

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