Threshold voltage change due to organic-inorganic interface in pentacene thin-film transistors

Jiyoul Lee; J. H. Kim; Seongil Im; Duk Young Jung

doi:10.1063/1.1767617

Threshold voltage change due to organic-inorganic interface in pentacene thin-film transistors

Jiyoul Lee, J. H. Kim, Seongil Im, Duk Young Jung

Department of Physics

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

A 270nm thick Al₂O_3+x gate dielectric deposited on indium tin oxide glass was used to construct the pentacene-based organic thin-film transistors (OTFT). Two different deposition techniques, traditional thermal evaporation (TE) and energetic cluster evaporation (ECE), were used for the investigation. The TE-depsoited pentacene channel appeared superior to the ECE-deposited pentacene in regard to hole mobility and crystallinity. However, the ECE-prepared OTFT show a threshold voltage shift which is more prominent with proper chemical treatment on the surface of Al₂O_3+x gate oxide.

Original language	English
Pages (from-to)	2301-2304
Number of pages	4
Journal	Journal of Applied Physics
Volume	96
Issue number	4
DOIs	https://doi.org/10.1063/1.1767617
Publication status	Published - 2004 Aug 15

Bibliographical note

Funding Information:
The authors acknowledge the financial support from KISTEP (Grant No. M1-0214-00-0228) and the BK 21 Program. J.H.K. acknowledges support from eSSC at Postech funded by KOSEF.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1767617

Cite this

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abstract = "A 270nm thick Al2O3+x gate dielectric deposited on indium tin oxide glass was used to construct the pentacene-based organic thin-film transistors (OTFT). Two different deposition techniques, traditional thermal evaporation (TE) and energetic cluster evaporation (ECE), were used for the investigation. The TE-depsoited pentacene channel appeared superior to the ECE-deposited pentacene in regard to hole mobility and crystallinity. However, the ECE-prepared OTFT show a threshold voltage shift which is more prominent with proper chemical treatment on the surface of Al2O3+x gate oxide.",

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AU - Lee, Jiyoul

AU - Kim, J. H.

AU - Im, Seongil

AU - Jung, Duk Young

N1 - Funding Information: The authors acknowledge the financial support from KISTEP (Grant No. M1-0214-00-0228) and the BK 21 Program. J.H.K. acknowledges support from eSSC at Postech funded by KOSEF.

PY - 2004/8/15

Y1 - 2004/8/15

N2 - A 270nm thick Al2O3+x gate dielectric deposited on indium tin oxide glass was used to construct the pentacene-based organic thin-film transistors (OTFT). Two different deposition techniques, traditional thermal evaporation (TE) and energetic cluster evaporation (ECE), were used for the investigation. The TE-depsoited pentacene channel appeared superior to the ECE-deposited pentacene in regard to hole mobility and crystallinity. However, the ECE-prepared OTFT show a threshold voltage shift which is more prominent with proper chemical treatment on the surface of Al2O3+x gate oxide.

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Threshold voltage change due to organic-inorganic interface in pentacene thin-film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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