A 270nm thick Al2O3+x gate dielectric deposited on indium tin oxide glass was used to construct the pentacene-based organic thin-film transistors (OTFT). Two different deposition techniques, traditional thermal evaporation (TE) and energetic cluster evaporation (ECE), were used for the investigation. The TE-depsoited pentacene channel appeared superior to the ECE-deposited pentacene in regard to hole mobility and crystallinity. However, the ECE-prepared OTFT show a threshold voltage shift which is more prominent with proper chemical treatment on the surface of Al2O3+x gate oxide.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from KISTEP (Grant No. M1-0214-00-0228) and the BK 21 Program. J.H.K. acknowledges support from eSSC at Postech funded by KOSEF.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)