Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

Jong Ho Lee, Gun Hwan Kim, Young Bae Ahn, Ji Woon Park, Seung Wook Ryu, Cheol Seong Hwang, Hyeong Joon Kim

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)

Abstract

Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO 2 unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5 V.

Original languageEnglish
Article number123505
JournalApplied Physics Letters
Volume100
Issue number12
DOIs
Publication statusPublished - 2012 Mar 19

Bibliographical note

Funding Information:
This work was supported by R&D Program (#:10039191), and National Research Program for Nano Semiconductor Apparatus Development sponsored by the Korean Ministry of Knowledge and Economy.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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