Thin film transistors by solution-based indium gallium zinc oxide/carbon nanotubes blend

Keun Woo Lee; Kon Yi Heo; Sang Hoon Oh; Abderrafia Moujoud; Gun Hee Kim; Hyun Jae Kim

doi:10.1016/j.tsf.2009.01.145

Thin film transistors by solution-based indium gallium zinc oxide/carbon nanotubes blend

Keun Woo Lee, Kon Yi Heo, Sang Hoon Oh, Abderrafia Moujoud, Gun Hee Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Solution-based indium gallium zinc oxide (IGZO)/single-walled carbon nanotubes (SWNTs) blend have been used to fabricate the channel of thin film transistors (TFTs). The electrical characteristics of the fabricated devices were examined. We found a low leakage current and a higher on/off currents ratio for TFT with SWNTs compared to solution-based TFTs made without SWNTs. The saturation field effect mobility (μ_sat) of about 0.22 cm²/Vs, the current on/off ratio is ~ 10⁵, the subthreshod swing is ~ 2.58 V/decade and the threshold voltage (V_th) is less than - 2.3 V. We demonstrated that the solution-based blend active layer provides the possibility of producing higher performance TFTs for low-cost large area electronic and flexible devices.

Original language	English
Pages (from-to)	4011-4014
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2009.01.145
Publication status	Published - 2009 May 29

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R0A-2007-000-10044-0 (2007)).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2009.01.145

Cite this

@article{17d456bf23d1418abb9eba368de9eabf,

title = "Thin film transistors by solution-based indium gallium zinc oxide/carbon nanotubes blend",

abstract = "Solution-based indium gallium zinc oxide (IGZO)/single-walled carbon nanotubes (SWNTs) blend have been used to fabricate the channel of thin film transistors (TFTs). The electrical characteristics of the fabricated devices were examined. We found a low leakage current and a higher on/off currents ratio for TFT with SWNTs compared to solution-based TFTs made without SWNTs. The saturation field effect mobility (μsat) of about 0.22 cm2/Vs, the current on/off ratio is ~ 105, the subthreshod swing is ~ 2.58 V/decade and the threshold voltage (Vth) is less than - 2.3 V. We demonstrated that the solution-based blend active layer provides the possibility of producing higher performance TFTs for low-cost large area electronic and flexible devices.",

author = "Lee, {Keun Woo} and Heo, {Kon Yi} and Oh, {Sang Hoon} and Abderrafia Moujoud and Kim, {Gun Hee} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R0A-2007-000-10044-0 (2007)).",

year = "2009",

month = may,

day = "29",

doi = "10.1016/j.tsf.2009.01.145",

language = "English",

volume = "517",

pages = "4011--4014",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "14",

}

TY - JOUR

T1 - Thin film transistors by solution-based indium gallium zinc oxide/carbon nanotubes blend

AU - Lee, Keun Woo

AU - Heo, Kon Yi

AU - Oh, Sang Hoon

AU - Moujoud, Abderrafia

AU - Kim, Gun Hee

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R0A-2007-000-10044-0 (2007)).

PY - 2009/5/29

Y1 - 2009/5/29

N2 - Solution-based indium gallium zinc oxide (IGZO)/single-walled carbon nanotubes (SWNTs) blend have been used to fabricate the channel of thin film transistors (TFTs). The electrical characteristics of the fabricated devices were examined. We found a low leakage current and a higher on/off currents ratio for TFT with SWNTs compared to solution-based TFTs made without SWNTs. The saturation field effect mobility (μsat) of about 0.22 cm2/Vs, the current on/off ratio is ~ 105, the subthreshod swing is ~ 2.58 V/decade and the threshold voltage (Vth) is less than - 2.3 V. We demonstrated that the solution-based blend active layer provides the possibility of producing higher performance TFTs for low-cost large area electronic and flexible devices.

AB - Solution-based indium gallium zinc oxide (IGZO)/single-walled carbon nanotubes (SWNTs) blend have been used to fabricate the channel of thin film transistors (TFTs). The electrical characteristics of the fabricated devices were examined. We found a low leakage current and a higher on/off currents ratio for TFT with SWNTs compared to solution-based TFTs made without SWNTs. The saturation field effect mobility (μsat) of about 0.22 cm2/Vs, the current on/off ratio is ~ 105, the subthreshod swing is ~ 2.58 V/decade and the threshold voltage (Vth) is less than - 2.3 V. We demonstrated that the solution-based blend active layer provides the possibility of producing higher performance TFTs for low-cost large area electronic and flexible devices.

UR - http://www.scopus.com/inward/record.url?scp=65449155806&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65449155806&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.01.145

DO - 10.1016/j.tsf.2009.01.145

M3 - Article

AN - SCOPUS:65449155806

SN - 0040-6090

VL - 517

SP - 4011

EP - 4014

JO - Thin Solid Films

JF - Thin Solid Films

IS - 14

ER -

Thin film transistors by solution-based indium gallium zinc oxide/carbon nanotubes blend

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this