Thin ferroelectric poly(vinylidene fluoride-chlorotrifluoro ethylene) films for thermal history independent non-volatile polymer memory

Richard Hahnkee Kim; Seok Ju Kang; Insung Bae; Yeon Sik Choi; Youn Jung Park; Cheolmin Park

doi:10.1016/j.orgel.2011.11.018

Thin ferroelectric poly(vinylidene fluoride-chlorotrifluoro ethylene) films for thermal history independent non-volatile polymer memory

Richard Hahnkee Kim, Seok Ju Kang, Insung Bae, Yeon Sik Choi, Youn Jung Park, Cheolmin Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

In this study, we investigated the molecular and microstructures of thin poly(vinylidene fluoride-chlorotrifluoro ethylene) (PVDF-CTFE) copolymer films with three different CTFE compositions of 10, 15, 20 wt% with respect to PVDF in relation with their ferroelectric properties. All PVDF-CTFE annealed at 130°C showed consecutive TTTT trans conformation with β type crystals while films molten and re-crystallized from a temperature above their melting points exhibited α type crystals with characteristic TGTG conformation. Microstructures of the films treated with the two different thermal histories also supported the formation of β and α type crystals with hundreds of nanometer scale sphere caps and micron level spherulites, respectively. Interestingly, PVDF-CTFE films with both α and β type crystals gave rise to relatively high remnant polarization of approximately 4 μC/cm ² in metal/ferroelectric/metal capacitors regardless of the composition of CTFE. The ferroelectric polarization of a PVDF-CTFE film independent of thermal processing history allowed a wide processing window and easy fabrication protocol, resulting in a non-volatile ferroelectric field effect transistor memory which exhibited saturated hysteresis loops with the current ON/OFF ratio of approximately 10³ at ±60 V sweep and reliable data retention.

Original language	English
Pages (from-to)	491-497
Number of pages	7
Journal	Organic Electronics
Volume	13
Issue number	3
DOIs	https://doi.org/10.1016/j.orgel.2011.11.018
Publication status	Published - 2012 Mar

Bibliographical note

Funding Information:
This work was supported by the Second Stage of the Brain Korea 21 Project in 2006 and by a National Research Foundation of Korea (NRF) Grant funded by the Ministry of Science and Technology (MEST), Republic of Korea (No. R11-2007-050-03001-0 ), ( MOEHRD ; KRF-2009-0080235 ). This research was also supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (Nos. 2010K001430 and 2011K000685 ). The X-ray experiments at PAL (4C2 beamline), Korea were supported by MEST and POSCO, Korea.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.orgel.2011.11.018

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@article{e4b736e6c0544efda2d8d3513a7c2071,

title = "Thin ferroelectric poly(vinylidene fluoride-chlorotrifluoro ethylene) films for thermal history independent non-volatile polymer memory",

abstract = "In this study, we investigated the molecular and microstructures of thin poly(vinylidene fluoride-chlorotrifluoro ethylene) (PVDF-CTFE) copolymer films with three different CTFE compositions of 10, 15, 20 wt% with respect to PVDF in relation with their ferroelectric properties. All PVDF-CTFE annealed at 130°C showed consecutive TTTT trans conformation with β type crystals while films molten and re-crystallized from a temperature above their melting points exhibited α type crystals with characteristic TGTG conformation. Microstructures of the films treated with the two different thermal histories also supported the formation of β and α type crystals with hundreds of nanometer scale sphere caps and micron level spherulites, respectively. Interestingly, PVDF-CTFE films with both α and β type crystals gave rise to relatively high remnant polarization of approximately 4 μC/cm 2 in metal/ferroelectric/metal capacitors regardless of the composition of CTFE. The ferroelectric polarization of a PVDF-CTFE film independent of thermal processing history allowed a wide processing window and easy fabrication protocol, resulting in a non-volatile ferroelectric field effect transistor memory which exhibited saturated hysteresis loops with the current ON/OFF ratio of approximately 103 at ±60 V sweep and reliable data retention.",

author = "Kim, {Richard Hahnkee} and Kang, {Seok Ju} and Insung Bae and Choi, {Yeon Sik} and Park, {Youn Jung} and Cheolmin Park",

note = "Funding Information: This work was supported by the Second Stage of the Brain Korea 21 Project in 2006 and by a National Research Foundation of Korea (NRF) Grant funded by the Ministry of Science and Technology (MEST), Republic of Korea (No. R11-2007-050-03001-0 ), ( MOEHRD ; KRF-2009-0080235 ). This research was also supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (Nos. 2010K001430 and 2011K000685 ). The X-ray experiments at PAL (4C2 beamline), Korea were supported by MEST and POSCO, Korea. ",

year = "2012",

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AU - Kim, Richard Hahnkee

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AU - Bae, Insung

AU - Choi, Yeon Sik

AU - Park, Youn Jung

AU - Park, Cheolmin

N1 - Funding Information: This work was supported by the Second Stage of the Brain Korea 21 Project in 2006 and by a National Research Foundation of Korea (NRF) Grant funded by the Ministry of Science and Technology (MEST), Republic of Korea (No. R11-2007-050-03001-0 ), ( MOEHRD ; KRF-2009-0080235 ). This research was also supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (Nos. 2010K001430 and 2011K000685 ). The X-ray experiments at PAL (4C2 beamline), Korea were supported by MEST and POSCO, Korea.

PY - 2012/3

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N2 - In this study, we investigated the molecular and microstructures of thin poly(vinylidene fluoride-chlorotrifluoro ethylene) (PVDF-CTFE) copolymer films with three different CTFE compositions of 10, 15, 20 wt% with respect to PVDF in relation with their ferroelectric properties. All PVDF-CTFE annealed at 130°C showed consecutive TTTT trans conformation with β type crystals while films molten and re-crystallized from a temperature above their melting points exhibited α type crystals with characteristic TGTG conformation. Microstructures of the films treated with the two different thermal histories also supported the formation of β and α type crystals with hundreds of nanometer scale sphere caps and micron level spherulites, respectively. Interestingly, PVDF-CTFE films with both α and β type crystals gave rise to relatively high remnant polarization of approximately 4 μC/cm 2 in metal/ferroelectric/metal capacitors regardless of the composition of CTFE. The ferroelectric polarization of a PVDF-CTFE film independent of thermal processing history allowed a wide processing window and easy fabrication protocol, resulting in a non-volatile ferroelectric field effect transistor memory which exhibited saturated hysteresis loops with the current ON/OFF ratio of approximately 103 at ±60 V sweep and reliable data retention.

AB - In this study, we investigated the molecular and microstructures of thin poly(vinylidene fluoride-chlorotrifluoro ethylene) (PVDF-CTFE) copolymer films with three different CTFE compositions of 10, 15, 20 wt% with respect to PVDF in relation with their ferroelectric properties. All PVDF-CTFE annealed at 130°C showed consecutive TTTT trans conformation with β type crystals while films molten and re-crystallized from a temperature above their melting points exhibited α type crystals with characteristic TGTG conformation. Microstructures of the films treated with the two different thermal histories also supported the formation of β and α type crystals with hundreds of nanometer scale sphere caps and micron level spherulites, respectively. Interestingly, PVDF-CTFE films with both α and β type crystals gave rise to relatively high remnant polarization of approximately 4 μC/cm 2 in metal/ferroelectric/metal capacitors regardless of the composition of CTFE. The ferroelectric polarization of a PVDF-CTFE film independent of thermal processing history allowed a wide processing window and easy fabrication protocol, resulting in a non-volatile ferroelectric field effect transistor memory which exhibited saturated hysteresis loops with the current ON/OFF ratio of approximately 103 at ±60 V sweep and reliable data retention.

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Thin ferroelectric poly(vinylidene fluoride-chlorotrifluoro ethylene) films for thermal history independent non-volatile polymer memory

Abstract

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