Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy

C. D. Lee; B. K. Kim; J. W. Kim; H. L. Park; C. H. Chung; S. K. Chang; J. I. Lee; S. K. Noh

doi:10.1016/0022-0248(94)90794-3

Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy

C. D. Lee, B. K. Kim, J. W. Kim, H. L. Park, C. H. Chung, S. K. Chang, J. I. Lee, S. K. Noh

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by ALE (atomic layer epitaxy) modified from CVD (chemical vapor deposition). The optical properties of ZnSe films depending on thickness were studied through micro-Raman and PL (photoluminescence) spectroscopy. The critical thickness was determined to be about 0.1 μm by analyzing the change in the peak shift of LO-phonon modes of ZnSe films. This is confirmed from the increase of the intensities of the deep center band in the PL spectra when the thickness exceeds 0.1 μm.

Original language	English
Pages (from-to)	136-139
Number of pages	4
Journal	Journal of Crystal Growth
Volume	138
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(94)90794-3
Publication status	Published - 1994 Apr 2

Bibliographical note

Funding Information:
The authors are indebted to Mr. J.S. Kim of ISRC for his help in the micro-Raman measurements. This work was supported in part by the KOSEF through KRIS in 1993 and in part by the ministry of Education of Korea through ISRC in 1992.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(94)90794-3

Cite this

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title = "Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy",

abstract = "ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by ALE (atomic layer epitaxy) modified from CVD (chemical vapor deposition). The optical properties of ZnSe films depending on thickness were studied through micro-Raman and PL (photoluminescence) spectroscopy. The critical thickness was determined to be about 0.1 μm by analyzing the change in the peak shift of LO-phonon modes of ZnSe films. This is confirmed from the increase of the intensities of the deep center band in the PL spectra when the thickness exceeds 0.1 μm.",

author = "Lee, {C. D.} and Kim, {B. K.} and Kim, {J. W.} and Park, {H. L.} and Chung, {C. H.} and Chang, {S. K.} and Lee, {J. I.} and Noh, {S. K.}",

note = "Funding Information: The authors are indebted to Mr. J.S. Kim of ISRC for his help in the micro-Raman measurements. This work was supported in part by the KOSEF through KRIS in 1993 and in part by the ministry of Education of Korea through ISRC in 1992.",

year = "1994",

month = apr,

day = "2",

doi = "10.1016/0022-0248(94)90794-3",

language = "English",

volume = "138",

pages = "136--139",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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T1 - Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy

AU - Lee, C. D.

AU - Kim, B. K.

AU - Kim, J. W.

AU - Park, H. L.

AU - Chung, C. H.

AU - Chang, S. K.

AU - Lee, J. I.

AU - Noh, S. K.

N1 - Funding Information: The authors are indebted to Mr. J.S. Kim of ISRC for his help in the micro-Raman measurements. This work was supported in part by the KOSEF through KRIS in 1993 and in part by the ministry of Education of Korea through ISRC in 1992.

PY - 1994/4/2

Y1 - 1994/4/2

N2 - ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by ALE (atomic layer epitaxy) modified from CVD (chemical vapor deposition). The optical properties of ZnSe films depending on thickness were studied through micro-Raman and PL (photoluminescence) spectroscopy. The critical thickness was determined to be about 0.1 μm by analyzing the change in the peak shift of LO-phonon modes of ZnSe films. This is confirmed from the increase of the intensities of the deep center band in the PL spectra when the thickness exceeds 0.1 μm.

AB - ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by ALE (atomic layer epitaxy) modified from CVD (chemical vapor deposition). The optical properties of ZnSe films depending on thickness were studied through micro-Raman and PL (photoluminescence) spectroscopy. The critical thickness was determined to be about 0.1 μm by analyzing the change in the peak shift of LO-phonon modes of ZnSe films. This is confirmed from the increase of the intensities of the deep center band in the PL spectra when the thickness exceeds 0.1 μm.

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Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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