Thick AlxGa1-xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity

D. S. Kim; H. S. Ko; Y. M. Kim; S. J. Rhee; S. C. Hong; Y. H. Yee; D. S. Yee; J. C. Woo; H. J. Choi; J. Ihm; D. H. Woo; K. N. Kang

doi:10.1063/1.117724

Thick Al_xGa_1-xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity

D. S. Kim, H. S. Ko, Y. M. Kim, S. J. Rhee, S. C. Hong, Y. H. Yee, D. S. Yee, J. C. Woo, H. J. Choi, J. Ihm, D. H. Woo, K. N. Kang

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

A significant charge transfer, which differs from tunneling, over thick Al_xGa_1-xAs barrier in GaAs/ Al_xGa_1-xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-Å-thick Al_0.3Ga_0.7As barrier is universally "leaky" with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible.

Original language	English
Pages (from-to)	2513-2515
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	17
DOIs	https://doi.org/10.1063/1.117724
Publication status	Published - 1996 Oct 21

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.117724

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title = "Thick AlxGa1-xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity",

abstract = "A significant charge transfer, which differs from tunneling, over thick AlxGa1-xAs barrier in GaAs/ AlxGa1-xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-{\AA}-thick Al0.3Ga0.7As barrier is universally {"}leaky{"} with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible.",

author = "Kim, {D. S.} and Ko, {H. S.} and Kim, {Y. M.} and Rhee, {S. J.} and Hong, {S. C.} and Yee, {Y. H.} and Yee, {D. S.} and Woo, {J. C.} and Choi, {H. J.} and J. Ihm and Woo, {D. H.} and Kang, {K. N.}",

year = "1996",

month = oct,

day = "21",

doi = "10.1063/1.117724",

language = "English",

volume = "69",

pages = "2513--2515",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Thick AlxGa1-xAs

T2 - An intrinsically percolating barrier owing to its microscopic structural inhomogeneity

AU - Kim, D. S.

AU - Ko, H. S.

AU - Kim, Y. M.

AU - Rhee, S. J.

AU - Hong, S. C.

AU - Yee, Y. H.

AU - Yee, D. S.

AU - Woo, J. C.

AU - Choi, H. J.

AU - Ihm, J.

AU - Woo, D. H.

AU - Kang, K. N.

PY - 1996/10/21

Y1 - 1996/10/21

N2 - A significant charge transfer, which differs from tunneling, over thick AlxGa1-xAs barrier in GaAs/ AlxGa1-xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-Å-thick Al0.3Ga0.7As barrier is universally "leaky" with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible.

AB - A significant charge transfer, which differs from tunneling, over thick AlxGa1-xAs barrier in GaAs/ AlxGa1-xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-Å-thick Al0.3Ga0.7As barrier is universally "leaky" with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible.

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JO - Applied Physics Letters

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Thick Al_xGa_1-xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity

Abstract

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