Thermoelectric properties of Nb-doped SrO(SrTiQ3)1 epitaxial films

K. H. Lee; A. Ishizaki; H. Ohta; K. Koumoto

doi:10.1109/ICT.2007.4569442

Thermoelectric properties of Nb-doped SrO(SrTiQ₃)₁ epitaxial films

K. H. Lee, A. Ishizaki, H. Ohta, K. Koumoto

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Thermoelectric properties of the heavily Nb-doped SrO(SrTiO ₃)₁ were investigated over a wide temperature range (20 - 800 K) by the preparation of c-axis-oriented epitaxial films. The films were grown heteroepitaxially on the (001)-face of the LaAlO₃ substrate with an epitaxial relationship of (001) [100] Nb-doped SrO(SrTiO ₃)₁ || (001) [100] LaAlO₃. The thermoelectric properties of the Nb-doped SrO(SrTiO₃)₁ epitaxial films were enhanced compared with those of the polycrystalline ceramics, and the electronic transport occurred predominantly in the SrTiO₃ layers.

Original language	English
Title of host publication	Proceedings ICT'07 - 26th International Conference on Thermoelectrics
Pages	136-139
Number of pages	4
DOIs	https://doi.org/10.1109/ICT.2007.4569442
Publication status	Published - 2007
Event	ICT'07 - 26th International Conference on Thermoelectrics - Jeju, Korea, Republic of Duration: 2007 Jun 3 → 2007 Jun 7

Publication series

Name	International Conference on Thermoelectrics, ICT, Proceedings

Other

Other	ICT'07 - 26th International Conference on Thermoelectrics
Country/Territory	Korea, Republic of
City	Jeju
Period	07/6/3 → 07/6/7

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ICT.2007.4569442

Cite this

@inproceedings{fc9d596660c54d8ebf387cb78b701af8,

title = "Thermoelectric properties of Nb-doped SrO(SrTiQ3)1 epitaxial films",

abstract = "Thermoelectric properties of the heavily Nb-doped SrO(SrTiO 3)1 were investigated over a wide temperature range (20 - 800 K) by the preparation of c-axis-oriented epitaxial films. The films were grown heteroepitaxially on the (001)-face of the LaAlO3 substrate with an epitaxial relationship of (001) [100] Nb-doped SrO(SrTiO 3)1 || (001) [100] LaAlO3. The thermoelectric properties of the Nb-doped SrO(SrTiO3)1 epitaxial films were enhanced compared with those of the polycrystalline ceramics, and the electronic transport occurred predominantly in the SrTiO3 layers.",

author = "Lee, {K. H.} and A. Ishizaki and H. Ohta and K. Koumoto",

year = "2007",

doi = "10.1109/ICT.2007.4569442",

language = "English",

isbn = "9781424422623",

series = "International Conference on Thermoelectrics, ICT, Proceedings",

pages = "136--139",

booktitle = "Proceedings ICT'07 - 26th International Conference on Thermoelectrics",

note = "ICT'07 - 26th International Conference on Thermoelectrics ; Conference date: 03-06-2007 Through 07-06-2007",

}

Lee, KH, Ishizaki, A, Ohta, H & Koumoto, K 2007, Thermoelectric properties of Nb-doped SrO(SrTiQ₃)₁ epitaxial films. in Proceedings ICT'07 - 26th International Conference on Thermoelectrics., 4569442, International Conference on Thermoelectrics, ICT, Proceedings, pp. 136-139, ICT'07 - 26th International Conference on Thermoelectrics, Jeju, Korea, Republic of, 07/6/3. https://doi.org/10.1109/ICT.2007.4569442

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T1 - Thermoelectric properties of Nb-doped SrO(SrTiQ3)1 epitaxial films

AU - Lee, K. H.

AU - Ishizaki, A.

AU - Ohta, H.

AU - Koumoto, K.

PY - 2007

Y1 - 2007

N2 - Thermoelectric properties of the heavily Nb-doped SrO(SrTiO 3)1 were investigated over a wide temperature range (20 - 800 K) by the preparation of c-axis-oriented epitaxial films. The films were grown heteroepitaxially on the (001)-face of the LaAlO3 substrate with an epitaxial relationship of (001) [100] Nb-doped SrO(SrTiO 3)1 || (001) [100] LaAlO3. The thermoelectric properties of the Nb-doped SrO(SrTiO3)1 epitaxial films were enhanced compared with those of the polycrystalline ceramics, and the electronic transport occurred predominantly in the SrTiO3 layers.

AB - Thermoelectric properties of the heavily Nb-doped SrO(SrTiO 3)1 were investigated over a wide temperature range (20 - 800 K) by the preparation of c-axis-oriented epitaxial films. The films were grown heteroepitaxially on the (001)-face of the LaAlO3 substrate with an epitaxial relationship of (001) [100] Nb-doped SrO(SrTiO 3)1 || (001) [100] LaAlO3. The thermoelectric properties of the Nb-doped SrO(SrTiO3)1 epitaxial films were enhanced compared with those of the polycrystalline ceramics, and the electronic transport occurred predominantly in the SrTiO3 layers.

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DO - 10.1109/ICT.2007.4569442

M3 - Conference contribution

AN - SCOPUS:51849165014

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T3 - International Conference on Thermoelectrics, ICT, Proceedings

SP - 136

EP - 139

BT - Proceedings ICT'07 - 26th International Conference on Thermoelectrics

T2 - ICT'07 - 26th International Conference on Thermoelectrics

Y2 - 3 June 2007 through 7 June 2007

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