Thermoelectric properties of Mg3Sb2-xBix single crystals grown by Bridgman method

Soo Hyun Kim; Chung Man Kim; Yang Ki Hong; Kyung Ik Sim; Jae Hoon Kim; Takahiro Onimaru; Toshiro Takabatake; Myung Hwa Jung

doi:10.1088/2053-1591/2/5/055903

Thermoelectric properties of Mg₃Sb_2-xBi_x single crystals grown by Bridgman method

Soo Hyun Kim, Chung Man Kim, Yang Ki Hong, Kyung Ik Sim, Jae Hoon Kim, Takahiro Onimaru, Toshiro Takabatake, Myung Hwa Jung

Department of Physics

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Westudied the low-temperature thermoelectric properties of single crystals of Mg₃Sb_2-xBi_x (0≤x≤2) grown by the Bridgman method. The crystals are well aligned along the hexagonal c axis as documented in the huge anisotropy of the electrical resistivity; ρ_//c/ρ_⊥c = 100 for x = 2. Upon increasing x, the semiconducting behaviour in ρ(T) changes to the metallic behaviour, and the Seebeck coefficient S(T) at room temperature decreases from 590 μVK^-1 for x = 0 to 67 μVK^-1 for x=2. Although the thermal conductivity at 300 Kis as low as 0.88WmK^-1 for x = 0.7, the large resistivity of 1Ωcm leaves the figure of merit, ZT, at a low level of 5.8 × 10^-3 at 300 K.

Original language	English
Article number	055903
Journal	Materials Research Express
Volume	2
Issue number	5
DOIs	https://doi.org/10.1088/2053-1591/2/5/055903
Publication status	Published - 2015 May

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2014R1A2A1A11050401).

Publisher Copyright:
© 2015 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
Surfaces, Coatings and Films
Polymers and Plastics
Metals and Alloys

Access to Document

10.1088/2053-1591/2/5/055903

Cite this

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title = "Thermoelectric properties of Mg3Sb2-xBix single crystals grown by Bridgman method",

abstract = "Westudied the low-temperature thermoelectric properties of single crystals of Mg3Sb2-xBix (0≤x≤2) grown by the Bridgman method. The crystals are well aligned along the hexagonal c axis as documented in the huge anisotropy of the electrical resistivity; ρ//c/ρ⊥c = 100 for x = 2. Upon increasing x, the semiconducting behaviour in ρ(T) changes to the metallic behaviour, and the Seebeck coefficient S(T) at room temperature decreases from 590 μVK-1 for x = 0 to 67 μVK-1 for x=2. Although the thermal conductivity at 300 Kis as low as 0.88WmK-1 for x = 0.7, the large resistivity of 1Ωcm leaves the figure of merit, ZT, at a low level of 5.8 × 10-3 at 300 K.",

author = "Kim, {Soo Hyun} and Kim, {Chung Man} and Hong, {Yang Ki} and Sim, {Kyung Ik} and Kim, {Jae Hoon} and Takahiro Onimaru and Toshiro Takabatake and Jung, {Myung Hwa}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2014R1A2A1A11050401). Publisher Copyright: {\textcopyright} 2015 IOP Publishing Ltd.",

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AU - Kim, Chung Man

AU - Hong, Yang Ki

AU - Sim, Kyung Ik

AU - Kim, Jae Hoon

AU - Onimaru, Takahiro

AU - Takabatake, Toshiro

AU - Jung, Myung Hwa

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2014R1A2A1A11050401). Publisher Copyright: © 2015 IOP Publishing Ltd.

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N2 - Westudied the low-temperature thermoelectric properties of single crystals of Mg3Sb2-xBix (0≤x≤2) grown by the Bridgman method. The crystals are well aligned along the hexagonal c axis as documented in the huge anisotropy of the electrical resistivity; ρ//c/ρ⊥c = 100 for x = 2. Upon increasing x, the semiconducting behaviour in ρ(T) changes to the metallic behaviour, and the Seebeck coefficient S(T) at room temperature decreases from 590 μVK-1 for x = 0 to 67 μVK-1 for x=2. Although the thermal conductivity at 300 Kis as low as 0.88WmK-1 for x = 0.7, the large resistivity of 1Ωcm leaves the figure of merit, ZT, at a low level of 5.8 × 10-3 at 300 K.

AB - Westudied the low-temperature thermoelectric properties of single crystals of Mg3Sb2-xBix (0≤x≤2) grown by the Bridgman method. The crystals are well aligned along the hexagonal c axis as documented in the huge anisotropy of the electrical resistivity; ρ//c/ρ⊥c = 100 for x = 2. Upon increasing x, the semiconducting behaviour in ρ(T) changes to the metallic behaviour, and the Seebeck coefficient S(T) at room temperature decreases from 590 μVK-1 for x = 0 to 67 μVK-1 for x=2. Although the thermal conductivity at 300 Kis as low as 0.88WmK-1 for x = 0.7, the large resistivity of 1Ωcm leaves the figure of merit, ZT, at a low level of 5.8 × 10-3 at 300 K.

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