Thermoelectric properties of Mg3Sb2-xBix single crystals grown by Bridgman method

Soo Hyun Kim, Chung Man Kim, Yang Ki Hong, Kyung Ik Sim, Jae Hoon Kim, Takahiro Onimaru, Toshiro Takabatake, Myung Hwa Jung

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25 Citations (Scopus)


Westudied the low-temperature thermoelectric properties of single crystals of Mg3Sb2-xBix (0≤x≤2) grown by the Bridgman method. The crystals are well aligned along the hexagonal c axis as documented in the huge anisotropy of the electrical resistivity; ρ//c⊥c = 100 for x = 2. Upon increasing x, the semiconducting behaviour in ρ(T) changes to the metallic behaviour, and the Seebeck coefficient S(T) at room temperature decreases from 590 μVK-1 for x = 0 to 67 μVK-1 for x=2. Although the thermal conductivity at 300 Kis as low as 0.88WmK-1 for x = 0.7, the large resistivity of 1Ωcm leaves the figure of merit, ZT, at a low level of 5.8 × 10-3 at 300 K.

Original languageEnglish
Article number055903
JournalMaterials Research Express
Issue number5
Publication statusPublished - 2015 May

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2014R1A2A1A11050401).

Publisher Copyright:
© 2015 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys


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