Thermal stability of Ni-Pt-Ta alloy silicides on epi-Si1-xCx

Jung Ho Yoo; Hyun Jin Chang; Byoung Gi Min; Dae Hong Ko; Mann Ho Cho; Hyunchul Sohn; Tae Wan Lee

doi:10.1016/j.mseb.2008.10.012

Thermal stability of Ni-Pt-Ta alloy silicides on epi-Si_1-xC_x

Jung Ho Yoo, Hyun Jin Chang, Byoung Gi Min, Dae Hong Ko, Mann Ho Cho, Hyunchul Sohn, Tae Wan Lee

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We investigated the silicide formation in Ni/epi-Si_1-xC_x systems. Ni-Pt and Ni-Pt-Ta films were deposited on epi-Si_1-xC_x/Si substrates by DC magnetron sputtering and processed at various temperatures. The sheet resistance of the silicide from the Ni alloy/epi-Si_1-xC_x systems was maintained at low values compared to that from Ni/Si systems. By TEM and EDS analyses, we confirmed the presence of a Pt alloy layer at the top of the Ni-silicide layer. The stability of the silicide layer in the Ni alloy/epi-Si_1-xC_x system is explained by not only the Pt rich layer on the top of the Ni-silicide layer, but also by the presence of a small amount of Pt in the Ni-silicide layer or at the grain boundaries. And both the thermal stability and the morphology of silicide were greatly improved by the addition of Ta in Ni-Pt films.

Original language	English
Pages (from-to)	183-186
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	154-155
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2008.10.012
Publication status	Published - 2008 Dec 5

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2008.10.012

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title = "Thermal stability of Ni-Pt-Ta alloy silicides on epi-Si1-xCx",

abstract = "We investigated the silicide formation in Ni/epi-Si1-xCx systems. Ni-Pt and Ni-Pt-Ta films were deposited on epi-Si1-xCx/Si substrates by DC magnetron sputtering and processed at various temperatures. The sheet resistance of the silicide from the Ni alloy/epi-Si1-xCx systems was maintained at low values compared to that from Ni/Si systems. By TEM and EDS analyses, we confirmed the presence of a Pt alloy layer at the top of the Ni-silicide layer. The stability of the silicide layer in the Ni alloy/epi-Si1-xCx system is explained by not only the Pt rich layer on the top of the Ni-silicide layer, but also by the presence of a small amount of Pt in the Ni-silicide layer or at the grain boundaries. And both the thermal stability and the morphology of silicide were greatly improved by the addition of Ta in Ni-Pt films.",

author = "Yoo, {Jung Ho} and Chang, {Hyun Jin} and Min, {Byoung Gi} and Ko, {Dae Hong} and Cho, {Mann Ho} and Hyunchul Sohn and Lee, {Tae Wan}",

year = "2008",

month = dec,

day = "5",

doi = "10.1016/j.mseb.2008.10.012",

language = "English",

volume = "154-155",

pages = "183--186",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

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T1 - Thermal stability of Ni-Pt-Ta alloy silicides on epi-Si1-xCx

AU - Yoo, Jung Ho

AU - Chang, Hyun Jin

AU - Min, Byoung Gi

AU - Ko, Dae Hong

AU - Cho, Mann Ho

AU - Sohn, Hyunchul

AU - Lee, Tae Wan

PY - 2008/12/5

Y1 - 2008/12/5

N2 - We investigated the silicide formation in Ni/epi-Si1-xCx systems. Ni-Pt and Ni-Pt-Ta films were deposited on epi-Si1-xCx/Si substrates by DC magnetron sputtering and processed at various temperatures. The sheet resistance of the silicide from the Ni alloy/epi-Si1-xCx systems was maintained at low values compared to that from Ni/Si systems. By TEM and EDS analyses, we confirmed the presence of a Pt alloy layer at the top of the Ni-silicide layer. The stability of the silicide layer in the Ni alloy/epi-Si1-xCx system is explained by not only the Pt rich layer on the top of the Ni-silicide layer, but also by the presence of a small amount of Pt in the Ni-silicide layer or at the grain boundaries. And both the thermal stability and the morphology of silicide were greatly improved by the addition of Ta in Ni-Pt films.

AB - We investigated the silicide formation in Ni/epi-Si1-xCx systems. Ni-Pt and Ni-Pt-Ta films were deposited on epi-Si1-xCx/Si substrates by DC magnetron sputtering and processed at various temperatures. The sheet resistance of the silicide from the Ni alloy/epi-Si1-xCx systems was maintained at low values compared to that from Ni/Si systems. By TEM and EDS analyses, we confirmed the presence of a Pt alloy layer at the top of the Ni-silicide layer. The stability of the silicide layer in the Ni alloy/epi-Si1-xCx system is explained by not only the Pt rich layer on the top of the Ni-silicide layer, but also by the presence of a small amount of Pt in the Ni-silicide layer or at the grain boundaries. And both the thermal stability and the morphology of silicide were greatly improved by the addition of Ta in Ni-Pt films.

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SN - 0921-5107

VL - 154-155

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EP - 186

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Thermal stability of Ni-Pt-Ta alloy silicides on epi-Si_1-xC_x

Abstract

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