The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.
Bibliographical noteFunding Information:
This work was supported by the Basic Research Program (2012R1A2A1A03006049 and 2009-0083540), Global Frontier Research Center for Advanced Soft Electronics (2011-0031635) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology and the Technology Innovation Program (Grant 10041066) funded by the Ministry of Knowledge Economy (MKE), Republic of Korea.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)