Thermal stability of epitaxial Pt films on Y 2O 3 in a metal-oxide-Si structure

M. H. Cho, D. W. Moon, K. H. Min, R. Sinclair, S. A. Park, Y. K. Kim, K. Jeong, S. K. Kang, D. H. Ko

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The formation of high quality, sputter deposited platinum epitaxial layers grown on an epitaxial yttrium oxide film on silicon was demonstrated. The interfacial characteristics in the growth of platinum on yttrium oxide film and its effects were observed. It was found that the atomic arrangement at the interface between the platinum and the oxide was well ordered, and no perceptible interdiffusion was observed even at annealing temperature of up to 700°C under an oxygen atmosphere. The findings show that the crystalline structure at the interfacial and surface regions showed a well-ordered atomic arrangement despite their large lattice mismatch.

Original languageEnglish
Pages (from-to)4758-4760
Number of pages3
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2003 Dec 8

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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