Thermal stability of epitaxial Pt films on Y 2O 3 in a metal-oxide-Si structure

M. H. Cho; D. W. Moon; K. H. Min; R. Sinclair; S. A. Park; Y. K. Kim; K. Jeong; S. K. Kang; D. H. Ko

doi:10.1063/1.1632541

Thermal stability of epitaxial Pt films on Y ₂O ₃ in a metal-oxide-Si structure

M. H. Cho, D. W. Moon, K. H. Min, R. Sinclair, S. A. Park, Y. K. Kim, K. Jeong, S. K. Kang, D. H. Ko

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The formation of high quality, sputter deposited platinum epitaxial layers grown on an epitaxial yttrium oxide film on silicon was demonstrated. The interfacial characteristics in the growth of platinum on yttrium oxide film and its effects were observed. It was found that the atomic arrangement at the interface between the platinum and the oxide was well ordered, and no perceptible interdiffusion was observed even at annealing temperature of up to 700°C under an oxygen atmosphere. The findings show that the crystalline structure at the interfacial and surface regions showed a well-ordered atomic arrangement despite their large lattice mismatch.

Original language	English
Pages (from-to)	4758-4760
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	23
DOIs	https://doi.org/10.1063/1.1632541
Publication status	Published - 2003 Dec 8

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1632541

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title = "Thermal stability of epitaxial Pt films on Y 2O 3 in a metal-oxide-Si structure",

abstract = "The formation of high quality, sputter deposited platinum epitaxial layers grown on an epitaxial yttrium oxide film on silicon was demonstrated. The interfacial characteristics in the growth of platinum on yttrium oxide film and its effects were observed. It was found that the atomic arrangement at the interface between the platinum and the oxide was well ordered, and no perceptible interdiffusion was observed even at annealing temperature of up to 700°C under an oxygen atmosphere. The findings show that the crystalline structure at the interfacial and surface regions showed a well-ordered atomic arrangement despite their large lattice mismatch.",

author = "Cho, {M. H.} and Moon, {D. W.} and Min, {K. H.} and R. Sinclair and Park, {S. A.} and Kim, {Y. K.} and K. Jeong and Kang, {S. K.} and Ko, {D. H.}",

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T1 - Thermal stability of epitaxial Pt films on Y 2O 3 in a metal-oxide-Si structure

AU - Cho, M. H.

AU - Moon, D. W.

AU - Min, K. H.

AU - Sinclair, R.

AU - Park, S. A.

AU - Kim, Y. K.

AU - Jeong, K.

AU - Kang, S. K.

AU - Ko, D. H.

PY - 2003/12/8

Y1 - 2003/12/8

N2 - The formation of high quality, sputter deposited platinum epitaxial layers grown on an epitaxial yttrium oxide film on silicon was demonstrated. The interfacial characteristics in the growth of platinum on yttrium oxide film and its effects were observed. It was found that the atomic arrangement at the interface between the platinum and the oxide was well ordered, and no perceptible interdiffusion was observed even at annealing temperature of up to 700°C under an oxygen atmosphere. The findings show that the crystalline structure at the interfacial and surface regions showed a well-ordered atomic arrangement despite their large lattice mismatch.

AB - The formation of high quality, sputter deposited platinum epitaxial layers grown on an epitaxial yttrium oxide film on silicon was demonstrated. The interfacial characteristics in the growth of platinum on yttrium oxide film and its effects were observed. It was found that the atomic arrangement at the interface between the platinum and the oxide was well ordered, and no perceptible interdiffusion was observed even at annealing temperature of up to 700°C under an oxygen atmosphere. The findings show that the crystalline structure at the interfacial and surface regions showed a well-ordered atomic arrangement despite their large lattice mismatch.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Thermal stability of epitaxial Pt films on Y ₂O ₃ in a metal-oxide-Si structure

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