Thermal stability of Cu films on TiN/Ti/Si(100) by partially ionized beam deposition

H. G. Jang, K. H. Kim, D. J. Choi, S. Han, S. C. Choi, W. K. Choi, H. J. Jung, S. K. Koh

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1 Citation (Scopus)


Cu thin films with a thickness around 850 angstrom were prepared on Ti45N55/Ti/Si(100) substrates at room temperature by partially ionized beam deposition (PIBD) with an ion energy of 3 keV at pressure of 8×10-7-1×10-6 Torr. The Cu/Ti45N55/Ti/Si samples were annealed at 8×10-6-1×10-5 Torr with annealing temperature of 500 to 700°C for 30 min. Thermal stability of the PIB-Cu films was investigated with Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), and X-ray diffraction (XRD). The as deposited Cu films has a (111) texture and there was no change of phase in annealed Cu films regardless of annealing temperature. Grain size of the annealed Cu films increased with annealing temperature. SEM studies show no hillock and no voiding on the Cu film surface up to annealing temperature of 700°C. For PIB-Cu/Ti45N55/Ti/Si samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques (RBS, AES) up to 700°C in vacuum for 30 minutes.

Original languageEnglish
Pages (from-to)387-392
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1996
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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