Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs

Ying Ying Zhang; Zhun Zhong; Shi Guang Li; Soon Yen Jung; Kee Young Park; Ga Won Lee; Jin Suk Wang; Jung Woo Oh; Prashant Majhi; Hsing Huang Tseng; Hi Deok Lee

doi:10.1109/IWJT.2008.4540039

Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs

Ying Ying Zhang, Zhun Zhong, Shi Guang Li, Soon Yen Jung, Kee Young Park, Ga Won Lee, Jin Suk Wang, Jung Woo Oh, Prashant Majhi, Hsing Huang Tseng, Hi Deok Lee

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The thermal stability of Ni germanide utilizing pure Ni and Ni-Pd alloy on Ge-on-Si substrate was studied. The proposed Ni-Pd alloy shows the highly thermal immune Ni germandie due to reduced oxidation and retarded Ni and Ge diffusion. Therefore, the Ni-Pd alloy could be promising for the high mobility Ge MOSFET applications.

Original language	English
Title of host publication	IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages	158-161
Number of pages	4
DOIs	https://doi.org/10.1109/IWJT.2008.4540039
Publication status	Published - 2008
Event	IWJT-2008 - International Workshop on Junction Technology - Shanghai, China Duration: 2008 May 15 → 2008 May 16

Publication series

Name	IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Other

Other	IWJT-2008 - International Workshop on Junction Technology
Country/Territory	China
City	Shanghai
Period	08/5/15 → 08/5/16

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IWJT.2008.4540039

Cite this

Zhang, Y. Y., Zhong, Z., Li, S. G., Jung, S. Y., Park, K. Y., Lee, G. W., Wang, J. S., Oh, J. W., Majhi, P., Tseng, H. H., & Lee, H. D. (2008). Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology (pp. 158-161). Article 4540039 (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology). https://doi.org/10.1109/IWJT.2008.4540039

@inproceedings{b137f6ef33c84e83abdbdc996ea9108e,

title = "Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs",

abstract = "The thermal stability of Ni germanide utilizing pure Ni and Ni-Pd alloy on Ge-on-Si substrate was studied. The proposed Ni-Pd alloy shows the highly thermal immune Ni germandie due to reduced oxidation and retarded Ni and Ge diffusion. Therefore, the Ni-Pd alloy could be promising for the high mobility Ge MOSFET applications.",

author = "Zhang, {Ying Ying} and Zhun Zhong and Li, {Shi Guang} and Jung, {Soon Yen} and Park, {Kee Young} and Lee, {Ga Won} and Wang, {Jin Suk} and Oh, {Jung Woo} and Prashant Majhi and Tseng, {Hsing Huang} and Lee, {Hi Deok}",

year = "2008",

doi = "10.1109/IWJT.2008.4540039",

language = "English",

isbn = "9781424417384",

series = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",

pages = "158--161",

booktitle = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",

note = "IWJT-2008 - International Workshop on Junction Technology ; Conference date: 15-05-2008 Through 16-05-2008",

}

Zhang, YY, Zhong, Z, Li, SG, Jung, SY, Park, KY, Lee, GW, Wang, JS, Oh, JW, Majhi, P, Tseng, HH & Lee, HD 2008, Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs. in IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology., 4540039, IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology, pp. 158-161, IWJT-2008 - International Workshop on Junction Technology, Shanghai, China, 08/5/15. https://doi.org/10.1109/IWJT.2008.4540039

Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs. / Zhang, Ying Ying; Zhong, Zhun; Li, Shi Guang et al.
IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. p. 158-161 4540039 (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs

AU - Zhang, Ying Ying

AU - Zhong, Zhun

AU - Li, Shi Guang

AU - Jung, Soon Yen

AU - Park, Kee Young

AU - Lee, Ga Won

AU - Wang, Jin Suk

AU - Oh, Jung Woo

AU - Majhi, Prashant

AU - Tseng, Hsing Huang

AU - Lee, Hi Deok

PY - 2008

Y1 - 2008

N2 - The thermal stability of Ni germanide utilizing pure Ni and Ni-Pd alloy on Ge-on-Si substrate was studied. The proposed Ni-Pd alloy shows the highly thermal immune Ni germandie due to reduced oxidation and retarded Ni and Ge diffusion. Therefore, the Ni-Pd alloy could be promising for the high mobility Ge MOSFET applications.

AB - The thermal stability of Ni germanide utilizing pure Ni and Ni-Pd alloy on Ge-on-Si substrate was studied. The proposed Ni-Pd alloy shows the highly thermal immune Ni germandie due to reduced oxidation and retarded Ni and Ge diffusion. Therefore, the Ni-Pd alloy could be promising for the high mobility Ge MOSFET applications.

UR - http://www.scopus.com/inward/record.url?scp=50849135487&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50849135487&partnerID=8YFLogxK

U2 - 10.1109/IWJT.2008.4540039

DO - 10.1109/IWJT.2008.4540039

M3 - Conference contribution

AN - SCOPUS:50849135487

SN - 9781424417384

T3 - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

SP - 158

EP - 161

BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

T2 - IWJT-2008 - International Workshop on Junction Technology

Y2 - 15 May 2008 through 16 May 2008

ER -

Zhang YY, Zhong Z, Li SG, Jung SY, Park KY, Lee GW et al. Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. p. 158-161. 4540039. (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology). doi: 10.1109/IWJT.2008.4540039

Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs

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