Thermal resistance measurement of LED package with multichips

Lan Kim; Moo Whan Shin

doi:10.1109/TCAPT.2007.906332

Thermal resistance measurement of LED package with multichips

Lan Kim, Moo Whan Shin

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

90 Citations (Scopus)

Abstract

Thermal transient measurements of high power GaN-based light-emitting diodes (LEDs) with multichip designs are presented and discussed in the paper. Once transient cooling curve was obtained, the structure function theory was applied to determine the thermal resistance of packages. The total thermal resistance from junction to ambient considering optical power is 19.87 K/W, 10.78 K/W, 6.77 K/W for the one-chip, two-chip and four-chip packages, respectively. The contribution of each component to the total thermal resistance of the package can be determined from the cumulative structure function and differential structure function. The total thermal resistance of multichip packages is found to decrease with the number of chips due to parallel heat dissipation. However, the effect of the number of chips on thermal resistance of package strongly depends on the ratio of partial thermal resistance of chip and that of slug. Therefore, an important thermal design rule for packaging of high power multichip LEDs has been analogized.

Original language	English
Pages (from-to)	632-636
Number of pages	5
Journal	IEEE Transactions on Components and Packaging Technologies
Volume	30
Issue number	4
DOIs	https://doi.org/10.1109/TCAPT.2007.906332
Publication status	Published - 2007 Dec

Bibliographical note

Funding Information:
Manuscript received January 20, 2006; revised October 30, 2006. This work was supported by the Korean Industry Technology Evaluation and Planning. This work was recommended for publication by Associate Editor P. E. Raad upon evaluation of the reviewers comments. The authors are with the Department of Materials Science and Engineering, Myongji University, Kyunggi 449-728, Korea (e-mail: mwshin@mju.ac.kr). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TCAPT.2007.906332

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TCAPT.2007.906332

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@article{2767f3f3806f46fc84b6fcd618e873d7,

title = "Thermal resistance measurement of LED package with multichips",

abstract = "Thermal transient measurements of high power GaN-based light-emitting diodes (LEDs) with multichip designs are presented and discussed in the paper. Once transient cooling curve was obtained, the structure function theory was applied to determine the thermal resistance of packages. The total thermal resistance from junction to ambient considering optical power is 19.87 K/W, 10.78 K/W, 6.77 K/W for the one-chip, two-chip and four-chip packages, respectively. The contribution of each component to the total thermal resistance of the package can be determined from the cumulative structure function and differential structure function. The total thermal resistance of multichip packages is found to decrease with the number of chips due to parallel heat dissipation. However, the effect of the number of chips on thermal resistance of package strongly depends on the ratio of partial thermal resistance of chip and that of slug. Therefore, an important thermal design rule for packaging of high power multichip LEDs has been analogized.",

author = "Lan Kim and Shin, {Moo Whan}",

note = "Funding Information: Manuscript received January 20, 2006; revised October 30, 2006. This work was supported by the Korean Industry Technology Evaluation and Planning. This work was recommended for publication by Associate Editor P. E. Raad upon evaluation of the reviewers comments. The authors are with the Department of Materials Science and Engineering, Myongji University, Kyunggi 449-728, Korea (e-mail: mwshin@mju.ac.kr). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TCAPT.2007.906332",

year = "2007",

month = dec,

doi = "10.1109/TCAPT.2007.906332",

language = "English",

volume = "30",

pages = "632--636",

journal = "IEEE Transactions on Components and Packaging Technologies",

issn = "1521-3331",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Thermal resistance measurement of LED package with multichips

AU - Kim, Lan

AU - Shin, Moo Whan

N1 - Funding Information: Manuscript received January 20, 2006; revised October 30, 2006. This work was supported by the Korean Industry Technology Evaluation and Planning. This work was recommended for publication by Associate Editor P. E. Raad upon evaluation of the reviewers comments. The authors are with the Department of Materials Science and Engineering, Myongji University, Kyunggi 449-728, Korea (e-mail: mwshin@mju.ac.kr). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TCAPT.2007.906332

PY - 2007/12

Y1 - 2007/12

N2 - Thermal transient measurements of high power GaN-based light-emitting diodes (LEDs) with multichip designs are presented and discussed in the paper. Once transient cooling curve was obtained, the structure function theory was applied to determine the thermal resistance of packages. The total thermal resistance from junction to ambient considering optical power is 19.87 K/W, 10.78 K/W, 6.77 K/W for the one-chip, two-chip and four-chip packages, respectively. The contribution of each component to the total thermal resistance of the package can be determined from the cumulative structure function and differential structure function. The total thermal resistance of multichip packages is found to decrease with the number of chips due to parallel heat dissipation. However, the effect of the number of chips on thermal resistance of package strongly depends on the ratio of partial thermal resistance of chip and that of slug. Therefore, an important thermal design rule for packaging of high power multichip LEDs has been analogized.

AB - Thermal transient measurements of high power GaN-based light-emitting diodes (LEDs) with multichip designs are presented and discussed in the paper. Once transient cooling curve was obtained, the structure function theory was applied to determine the thermal resistance of packages. The total thermal resistance from junction to ambient considering optical power is 19.87 K/W, 10.78 K/W, 6.77 K/W for the one-chip, two-chip and four-chip packages, respectively. The contribution of each component to the total thermal resistance of the package can be determined from the cumulative structure function and differential structure function. The total thermal resistance of multichip packages is found to decrease with the number of chips due to parallel heat dissipation. However, the effect of the number of chips on thermal resistance of package strongly depends on the ratio of partial thermal resistance of chip and that of slug. Therefore, an important thermal design rule for packaging of high power multichip LEDs has been analogized.

UR - http://www.scopus.com/inward/record.url?scp=36849028570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36849028570&partnerID=8YFLogxK

U2 - 10.1109/TCAPT.2007.906332

DO - 10.1109/TCAPT.2007.906332

M3 - Article

AN - SCOPUS:36849028570

SN - 1521-3331

VL - 30

SP - 632

EP - 636

JO - IEEE Transactions on Components and Packaging Technologies

JF - IEEE Transactions on Components and Packaging Technologies

IS - 4

ER -

Thermal resistance measurement of LED package with multichips

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Bibliographical note

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