Thermal investigation of GaN-based laser diode package

Wong Joon Hwang; Tae Hee Lee; Jong Hwa Choi; Hyung Kun Kim; Ok Hyun Nam; Y. J. Park; Moo Whan Shin

doi:10.1109/TCAPT.2007.906346

Thermal investigation of GaN-based laser diode package

Wong Joon Hwang, Tae Hee Lee, Jong Hwa Choi, Hyung Kun Kim, Ok Hyun Nam, Y. J. Park, Moo Whan Shin

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We investigated thermal behavior of GaN-based laser diode (LD) packages as a function of cooling systems, die attaching materials, chip loading conditions, and optical performances. The electrical thermal transient technique was employed for the thermal measurement of junction temperature and thermal resistance of LD packages. The results demonstrate that the total thermal resistance of LD packages is controlled mainly by the packaging design rather than the chip structure itself. Significant changes in thermal resistance with input current were observed under a natural cooling system because of the sensitive change in the heat transfer coefficient with the change in temperature. Employment of PbSn as a die attachment was more advantageous over the Ag-paste in the thermal behavior of LD packages. The LD package with epi-down structure resulted in the lower thermal resistance compared to one with epi-up structure. A continuous increase in junction temperature was measured after lasing. It was attributed to an increase in the thermal resistance of LD when it took the optical power into an account. Effective input power was decreased by the lasing and led to high thermal resistance values.

Original language	English
Pages (from-to)	637-642
Number of pages	6
Journal	IEEE Transactions on Components and Packaging Technologies
Volume	30
Issue number	4
DOIs	https://doi.org/10.1109/TCAPT.2007.906346
Publication status	Published - 2007 Dec

Bibliographical note

Funding Information:
While in graduate school, he held a research as-sistantship and also worked at the Microelectronics Center of North Carolina, Research Triangle Park (via financial support from the BOC Group, Inc.).

Funding Information:
Manuscript received January 20, 2006; revised April 9, 2007. This work was supported by the Samsung Advanced Institute of Technology and the Korean Institute of Industrial Technology Evaluation and Planning. This work was recommended for publication by Associate Editor C. C. Lee upon evaluation of the reviewers comments. W. J. Hwang is with Seoul Semiconductor Company, Seoul 153-801, Korea. T. H. Lee is with Epivalley Company, Ltd., Gyunggi-Do 464-890, Korea. J. H. Choi and M. W. Shin are with the Department of Materials Science and Engineering, Myongji University, Gyunggi-Do 449-728, Korea (e-mail: mw-shin@mju.ac.kr). H. K. Kim and Y. J. Park are with the Samsung Advanced Institute Of Technology, Suwon 440-600, Korea. O. H. Nam is with the Department of Nano-Optical Engineering, Korea Polytechnic University, Seoul 135–940, Korea. Digital Object Identifier 10.1109/TCAPT.2007.906346

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TCAPT.2007.906346

Cite this

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title = "Thermal investigation of GaN-based laser diode package",

abstract = "We investigated thermal behavior of GaN-based laser diode (LD) packages as a function of cooling systems, die attaching materials, chip loading conditions, and optical performances. The electrical thermal transient technique was employed for the thermal measurement of junction temperature and thermal resistance of LD packages. The results demonstrate that the total thermal resistance of LD packages is controlled mainly by the packaging design rather than the chip structure itself. Significant changes in thermal resistance with input current were observed under a natural cooling system because of the sensitive change in the heat transfer coefficient with the change in temperature. Employment of PbSn as a die attachment was more advantageous over the Ag-paste in the thermal behavior of LD packages. The LD package with epi-down structure resulted in the lower thermal resistance compared to one with epi-up structure. A continuous increase in junction temperature was measured after lasing. It was attributed to an increase in the thermal resistance of LD when it took the optical power into an account. Effective input power was decreased by the lasing and led to high thermal resistance values.",

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note = "Funding Information: While in graduate school, he held a research as-sistantship and also worked at the Microelectronics Center of North Carolina, Research Triangle Park (via financial support from the BOC Group, Inc.). Funding Information: Manuscript received January 20, 2006; revised April 9, 2007. This work was supported by the Samsung Advanced Institute of Technology and the Korean Institute of Industrial Technology Evaluation and Planning. This work was recommended for publication by Associate Editor C. C. Lee upon evaluation of the reviewers comments. W. J. Hwang is with Seoul Semiconductor Company, Seoul 153-801, Korea. T. H. Lee is with Epivalley Company, Ltd., Gyunggi-Do 464-890, Korea. J. H. Choi and M. W. Shin are with the Department of Materials Science and Engineering, Myongji University, Gyunggi-Do 449-728, Korea (e-mail: mw-shin@mju.ac.kr). H. K. Kim and Y. J. Park are with the Samsung Advanced Institute Of Technology, Suwon 440-600, Korea. O. H. Nam is with the Department of Nano-Optical Engineering, Korea Polytechnic University, Seoul 135–940, Korea. Digital Object Identifier 10.1109/TCAPT.2007.906346",

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AU - Kim, Hyung Kun

AU - Nam, Ok Hyun

AU - Park, Y. J.

AU - Shin, Moo Whan

N1 - Funding Information: While in graduate school, he held a research as-sistantship and also worked at the Microelectronics Center of North Carolina, Research Triangle Park (via financial support from the BOC Group, Inc.). Funding Information: Manuscript received January 20, 2006; revised April 9, 2007. This work was supported by the Samsung Advanced Institute of Technology and the Korean Institute of Industrial Technology Evaluation and Planning. This work was recommended for publication by Associate Editor C. C. Lee upon evaluation of the reviewers comments. W. J. Hwang is with Seoul Semiconductor Company, Seoul 153-801, Korea. T. H. Lee is with Epivalley Company, Ltd., Gyunggi-Do 464-890, Korea. J. H. Choi and M. W. Shin are with the Department of Materials Science and Engineering, Myongji University, Gyunggi-Do 449-728, Korea (e-mail: mw-shin@mju.ac.kr). H. K. Kim and Y. J. Park are with the Samsung Advanced Institute Of Technology, Suwon 440-600, Korea. O. H. Nam is with the Department of Nano-Optical Engineering, Korea Polytechnic University, Seoul 135–940, Korea. Digital Object Identifier 10.1109/TCAPT.2007.906346

PY - 2007/12

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N2 - We investigated thermal behavior of GaN-based laser diode (LD) packages as a function of cooling systems, die attaching materials, chip loading conditions, and optical performances. The electrical thermal transient technique was employed for the thermal measurement of junction temperature and thermal resistance of LD packages. The results demonstrate that the total thermal resistance of LD packages is controlled mainly by the packaging design rather than the chip structure itself. Significant changes in thermal resistance with input current were observed under a natural cooling system because of the sensitive change in the heat transfer coefficient with the change in temperature. Employment of PbSn as a die attachment was more advantageous over the Ag-paste in the thermal behavior of LD packages. The LD package with epi-down structure resulted in the lower thermal resistance compared to one with epi-up structure. A continuous increase in junction temperature was measured after lasing. It was attributed to an increase in the thermal resistance of LD when it took the optical power into an account. Effective input power was decreased by the lasing and led to high thermal resistance values.

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Thermal investigation of GaN-based laser diode package

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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