TY - JOUR
T1 - Thermal endurance and microstructural evolution of PtGe for high-performance nano-scale Ge-on-Si MOSFETs
AU - Kang, Min Ho
AU - Shin, Hong Sik
AU - Oh, Se Kyung
AU - Yoo, Jung Ho
AU - Lee, Ga Won
AU - Oh, Jung Woo
AU - Majhi, Prashant
AU - Jammy, Raj
AU - Lee, Hi Deok
PY - 2011/7
Y1 - 2011/7
N2 - The thermal endurance and microstructural evolution of Ni-germanide (NiGe) and Pt-germanide (PtGe) on a Ge-on-Si substrate were compared in this paper. In case of the Ni/TiN structure, the sheet resistance exhibited a stable RTP window of 350 to 600 °C, while that of the Pt/TiN structure showed more stable characteristics up to 700 b C. Furthermore, after post-germanidation annealing, NiGe exhibited the formation of islands due to the severe agglomeration as well as a prominent grain boundary grooving, which accounts for the sharp increase of the sheet resistance from 550 °C, whereas PtGe showed a smooth and continuous surface morphological stability without signs of agglomeration even up to 600 °C. Although about two times higher resistivity (31.5 yufl-cm) and greater Ge consumption (3.27 nm) were shown, PtGe showed more stable sheet resistance, better surface and interface morphological stability and a wider thermal processing window above 100 °C than NiGe. Therefore, PtGe is more suitable for the germanided shallow source/drain for nano-scale Ge MOSFETs than NiGe.
AB - The thermal endurance and microstructural evolution of Ni-germanide (NiGe) and Pt-germanide (PtGe) on a Ge-on-Si substrate were compared in this paper. In case of the Ni/TiN structure, the sheet resistance exhibited a stable RTP window of 350 to 600 °C, while that of the Pt/TiN structure showed more stable characteristics up to 700 b C. Furthermore, after post-germanidation annealing, NiGe exhibited the formation of islands due to the severe agglomeration as well as a prominent grain boundary grooving, which accounts for the sharp increase of the sheet resistance from 550 °C, whereas PtGe showed a smooth and continuous surface morphological stability without signs of agglomeration even up to 600 °C. Although about two times higher resistivity (31.5 yufl-cm) and greater Ge consumption (3.27 nm) were shown, PtGe showed more stable sheet resistance, better surface and interface morphological stability and a wider thermal processing window above 100 °C than NiGe. Therefore, PtGe is more suitable for the germanided shallow source/drain for nano-scale Ge MOSFETs than NiGe.
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U2 - 10.1166/jnn.2011.4327
DO - 10.1166/jnn.2011.4327
M3 - Article
C2 - 22121583
AN - SCOPUS:84863025201
SN - 1533-4880
VL - 11
SP - 5633
EP - 5639
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
IS - 7
ER -