Thermal Desorption of Ge Native Oxides and the Loss of Ge fom the Surface

Jungwoo Oh; Joe C. Campbell

doi:10.1007/s11664-004-0144-4

Thermal Desorption of Ge Native Oxides and the Loss of Ge fom the Surface

Jungwoo Oh, Joe C. Campbell

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

94 Citations (Scopus)

Abstract

The annealing behavior of Ge native oxides has been studied with x-ray photoemission spectroscopy (XPS). The native oxides were primarily GeO ₂ with small amounts of GeO_x (x < 2). Annealing was performed using a rapid thermal processor (RTP) with a N₂ purge at atmospheric pressure. Ion-implanted Ge substrates were used to investigate the loss of Ge from the surface due to thermal desorption of Ge oxides. It was found that thermal desorption of volatile Ge oxides and oxidization of Ge take place successively, which results in the loss of Ge from the surface.

Original language	English
Pages (from-to)	364-367
Number of pages	4
Journal	Journal of Electronic Materials
Volume	33
Issue number	4
DOIs	https://doi.org/10.1007/s11664-004-0144-4
Publication status	Published - 2004 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-004-0144-4

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abstract = "The annealing behavior of Ge native oxides has been studied with x-ray photoemission spectroscopy (XPS). The native oxides were primarily GeO 2 with small amounts of GeOx (x < 2). Annealing was performed using a rapid thermal processor (RTP) with a N2 purge at atmospheric pressure. Ion-implanted Ge substrates were used to investigate the loss of Ge from the surface due to thermal desorption of Ge oxides. It was found that thermal desorption of volatile Ge oxides and oxidization of Ge take place successively, which results in the loss of Ge from the surface.",

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AB - The annealing behavior of Ge native oxides has been studied with x-ray photoemission spectroscopy (XPS). The native oxides were primarily GeO 2 with small amounts of GeOx (x < 2). Annealing was performed using a rapid thermal processor (RTP) with a N2 purge at atmospheric pressure. Ion-implanted Ge substrates were used to investigate the loss of Ge from the surface due to thermal desorption of Ge oxides. It was found that thermal desorption of volatile Ge oxides and oxidization of Ge take place successively, which results in the loss of Ge from the surface.

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Thermal Desorption of Ge Native Oxides and the Loss of Ge fom the Surface

Abstract

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