We investigated the thermal and plasma-enhanced atomic layer deposition (PE-ALD) of tantalum and titanium oxides from representative alkylamide precursors, Ta (N Me2) 5 (pentakis(dimethylamino)Ta, PDMAT) and Ti (N Me2) 4 [tetrakis(dimethylamido)Ti, TDMAT]. ALD of Ta2 O5 by PDMAT with water or oxygen plasma produced pure Ta2 O5 films with good self-saturation growth characteristics. However, incomplete self-saturation was observed for Ti O2 ALD from TDMAT. The film properties including microstructure, chemical composition, and electrical properties are discussed focusing on the comparative studies between thermal and PE-ALD processes for both oxides. The results indicate that the PDMAT is a promising precursor for both thermal and PE-ALD of Ta2 O5.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2006 Jun|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering