Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors

W. J. Maeng; H. Kim

doi:10.1149/1.2186427

Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors

W. J. Maeng, H. Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

82 Citations (Scopus)

Abstract

We investigated the thermal and plasma-enhanced atomic layer deposition (PE-ALD) of tantalum and titanium oxides from representative alkylamide precursors, Ta (N Me2) 5 (pentakis(dimethylamino)Ta, PDMAT) and Ti (N Me2) 4 [tetrakis(dimethylamido)Ti, TDMAT]. ALD of Ta2 O5 by PDMAT with water or oxygen plasma produced pure Ta2 O5 films with good self-saturation growth characteristics. However, incomplete self-saturation was observed for Ti O2 ALD from TDMAT. The film properties including microstructure, chemical composition, and electrical properties are discussed focusing on the comparative studies between thermal and PE-ALD processes for both oxides. The results indicate that the PDMAT is a promising precursor for both thermal and PE-ALD of Ta2 O5.

Original language	English
Pages (from-to)	G191-G194
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	6
DOIs	https://doi.org/10.1149/1.2186427
Publication status	Published - 2006 Jun

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "We investigated the thermal and plasma-enhanced atomic layer deposition (PE-ALD) of tantalum and titanium oxides from representative alkylamide precursors, Ta (N Me2) 5 (pentakis(dimethylamino)Ta, PDMAT) and Ti (N Me2) 4 [tetrakis(dimethylamido)Ti, TDMAT]. ALD of Ta2 O5 by PDMAT with water or oxygen plasma produced pure Ta2 O5 films with good self-saturation growth characteristics. However, incomplete self-saturation was observed for Ti O2 ALD from TDMAT. The film properties including microstructure, chemical composition, and electrical properties are discussed focusing on the comparative studies between thermal and PE-ALD processes for both oxides. The results indicate that the PDMAT is a promising precursor for both thermal and PE-ALD of Ta2 O5.",

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AU - Maeng, W. J.

AU - Kim, H.

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N2 - We investigated the thermal and plasma-enhanced atomic layer deposition (PE-ALD) of tantalum and titanium oxides from representative alkylamide precursors, Ta (N Me2) 5 (pentakis(dimethylamino)Ta, PDMAT) and Ti (N Me2) 4 [tetrakis(dimethylamido)Ti, TDMAT]. ALD of Ta2 O5 by PDMAT with water or oxygen plasma produced pure Ta2 O5 films with good self-saturation growth characteristics. However, incomplete self-saturation was observed for Ti O2 ALD from TDMAT. The film properties including microstructure, chemical composition, and electrical properties are discussed focusing on the comparative studies between thermal and PE-ALD processes for both oxides. The results indicate that the PDMAT is a promising precursor for both thermal and PE-ALD of Ta2 O5.

AB - We investigated the thermal and plasma-enhanced atomic layer deposition (PE-ALD) of tantalum and titanium oxides from representative alkylamide precursors, Ta (N Me2) 5 (pentakis(dimethylamino)Ta, PDMAT) and Ti (N Me2) 4 [tetrakis(dimethylamido)Ti, TDMAT]. ALD of Ta2 O5 by PDMAT with water or oxygen plasma produced pure Ta2 O5 films with good self-saturation growth characteristics. However, incomplete self-saturation was observed for Ti O2 ALD from TDMAT. The film properties including microstructure, chemical composition, and electrical properties are discussed focusing on the comparative studies between thermal and PE-ALD processes for both oxides. The results indicate that the PDMAT is a promising precursor for both thermal and PE-ALD of Ta2 O5.

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Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors

Abstract

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