Thermal and Electrical Conduction of Single-crystal Bi2Te3 Nanostructures grown using a one step process

Dambi Park; Sungjin Park; Kwangsik Jeong; Hong Sik Jeong; Jea Yong Song; Mann Ho Cho

doi:10.1038/srep19132

Thermal and Electrical Conduction of Single-crystal Bi₂Te₃ Nanostructures grown using a one step process

Dambi Park, Sungjin Park, Kwangsik Jeong, Hong Sik Jeong, Jea Yong Song, Mann Ho Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Single-crystal Bi₂Te₃ nanowires (NWs) and nanoribbons (NRs) were synthesized by a vapor-liquid-solid (VLS) method from Bi₂Te₃ powder. To investigate the thermal properties of the Bi₂Te₃ nanostructure, a nondestructive technique based on temperature dependent Raman mapping was carried out. The Raman peaks were red shifted with increasing temperature. In addition, the fraction of the laser power absorbed inside the Bi₂Te₃ nanostructures was estimated by optical simulation and used to calculate the thermal conductivity value (κ). The thermal conductivity value obtained for the Bi₂Te₃ NW and NR was 1.47 Wm^-1K^-1 and 1.81 Wm^-1K^-1 at 300 K, respectively. The electrical conductivity of the Bi₂Te₃ nanostructure was also measured. In particular, an excellent electrical conductivity value of 1.22 ∗ 10³Ω^-1cm^-1 was obtained for the Bi₂Te₃ NW at 300 K. This result can be attributed to topological insulator surface states. As a result of our study, the figure of merit (ZT) for the Bi₂Te₃ NW and NR can be significantly improved.

Original language	English
Article number	19132
Journal	Scientific reports
Volume	6
DOIs	https://doi.org/10.1038/srep19132
Publication status	Published - 2016 Jan 11

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2015R1A2A1A01007560). This research was also supported by the MOTIE (Ministry of Trade, Industry & Energy) (project number 10045360) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future Semiconductor device. This work was partially supported by the Joint Program for Samsung Electronics-Yonsei University. In addition, the authors also acknowledge the KBSI, Jeonju center for the help of FE-TEM and Micro Raman studies.

All Science Journal Classification (ASJC) codes

General

Access to Document

10.1038/srep19132

Cite this

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title = "Thermal and Electrical Conduction of Single-crystal Bi2Te3 Nanostructures grown using a one step process",

abstract = "Single-crystal Bi2Te3 nanowires (NWs) and nanoribbons (NRs) were synthesized by a vapor-liquid-solid (VLS) method from Bi2Te3 powder. To investigate the thermal properties of the Bi2Te3 nanostructure, a nondestructive technique based on temperature dependent Raman mapping was carried out. The Raman peaks were red shifted with increasing temperature. In addition, the fraction of the laser power absorbed inside the Bi2Te3 nanostructures was estimated by optical simulation and used to calculate the thermal conductivity value (κ). The thermal conductivity value obtained for the Bi2Te3 NW and NR was 1.47 Wm-1K-1 and 1.81 Wm-1K-1 at 300 K, respectively. The electrical conductivity of the Bi2Te3 nanostructure was also measured. In particular, an excellent electrical conductivity value of 1.22 ∗ 103Ω-1cm-1 was obtained for the Bi2Te3 NW at 300 K. This result can be attributed to topological insulator surface states. As a result of our study, the figure of merit (ZT) for the Bi2Te3 NW and NR can be significantly improved.",

author = "Dambi Park and Sungjin Park and Kwangsik Jeong and Jeong, {Hong Sik} and Song, {Jea Yong} and Cho, {Mann Ho}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2015R1A2A1A01007560). This research was also supported by the MOTIE (Ministry of Trade, Industry & Energy) (project number 10045360) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future Semiconductor device. This work was partially supported by the Joint Program for Samsung Electronics-Yonsei University. In addition, the authors also acknowledge the KBSI, Jeonju center for the help of FE-TEM and Micro Raman studies.",

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AU - Song, Jea Yong

AU - Cho, Mann Ho

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2015R1A2A1A01007560). This research was also supported by the MOTIE (Ministry of Trade, Industry & Energy) (project number 10045360) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future Semiconductor device. This work was partially supported by the Joint Program for Samsung Electronics-Yonsei University. In addition, the authors also acknowledge the KBSI, Jeonju center for the help of FE-TEM and Micro Raman studies.

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N2 - Single-crystal Bi2Te3 nanowires (NWs) and nanoribbons (NRs) were synthesized by a vapor-liquid-solid (VLS) method from Bi2Te3 powder. To investigate the thermal properties of the Bi2Te3 nanostructure, a nondestructive technique based on temperature dependent Raman mapping was carried out. The Raman peaks were red shifted with increasing temperature. In addition, the fraction of the laser power absorbed inside the Bi2Te3 nanostructures was estimated by optical simulation and used to calculate the thermal conductivity value (κ). The thermal conductivity value obtained for the Bi2Te3 NW and NR was 1.47 Wm-1K-1 and 1.81 Wm-1K-1 at 300 K, respectively. The electrical conductivity of the Bi2Te3 nanostructure was also measured. In particular, an excellent electrical conductivity value of 1.22 ∗ 103Ω-1cm-1 was obtained for the Bi2Te3 NW at 300 K. This result can be attributed to topological insulator surface states. As a result of our study, the figure of merit (ZT) for the Bi2Te3 NW and NR can be significantly improved.

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