Theoretical Evaluation of Two-Dimensional Ferroelectric Material CuInP2S6for Ferroelectric Tunnel Junction Device

Eunyeong Yang, Kyung Rok Kim, Jiwon Chang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Ferroelectric tunnel junction (FTJ) exploiting the switchable polarization of ferroelectric material holds great potential for the low-power non-volatile memory. Recently, two-dimensional (2D) ferroelectric material CuInP2S6 (CIPS) which can provide ferroelectricity at the ultimate atomic-scale has been successfully introduced in FTJ to achieve significantly improved TER. Here, we present a theoretical study on the performance of FTJ based on CIPS through the quantum transport simulation using kp Hamiltonian obtained from density functional theory. Benchmarking with ferroelectric HfZrO2-based FTJ reveals that much higher TER can be achieved in CIPS-based FTJ due to a lower tunneling potential barrier and a larger tunneling effective mass.

Original languageEnglish
Pages (from-to)1472-1475
Number of pages4
JournalIEEE Electron Device Letters
Volume42
Issue number10
DOIs
Publication statusPublished - 2021 Oct

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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