Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability

J. H. Yum; G. Bersuker; J. Oh; S. K. Banerjee

doi:10.1063/1.3679720

Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability

J. H. Yum, G. Bersuker, J. Oh, S. K. Banerjee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The effectiveness of an atomic layer deposited beryllium oxide (BeO) barrier layer has been investigated through physical and electrical analysis as a way to control the interfacial layer on Si and III-V substrates recently. In this paper, a theoretical model is suggested to find the most promising gate dielectric based on electromagnetic interactions between the channel carrier and atoms in the gate dielectric, as well as the structural stability of the gate dielectric. Using this model, Al ₂O ₃, BeO, SiO ₂, and HfO ₂ were evaluated as gate dielectrics for Si and III-V metal oxide semiconductor devices.

Original language	English
Article number	053501
Journal	Applied Physics Letters
Volume	100
Issue number	5
DOIs	https://doi.org/10.1063/1.3679720
Publication status	Published - 2012 Jan 30

Bibliographical note

Funding Information:
This work was supported in part by the Robert Welch Foundation (Grant Nos. F-1038 and F-1621) and NSF (Grant No. DMR-0706227).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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abstract = "The effectiveness of an atomic layer deposited beryllium oxide (BeO) barrier layer has been investigated through physical and electrical analysis as a way to control the interfacial layer on Si and III-V substrates recently. In this paper, a theoretical model is suggested to find the most promising gate dielectric based on electromagnetic interactions between the channel carrier and atoms in the gate dielectric, as well as the structural stability of the gate dielectric. Using this model, Al 2O 3, BeO, SiO 2, and HfO 2 were evaluated as gate dielectrics for Si and III-V metal oxide semiconductor devices.",

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AU - Yum, J. H.

AU - Bersuker, G.

AU - Oh, J.

AU - Banerjee, S. K.

N1 - Funding Information: This work was supported in part by the Robert Welch Foundation (Grant Nos. F-1038 and F-1621) and NSF (Grant No. DMR-0706227).

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N2 - The effectiveness of an atomic layer deposited beryllium oxide (BeO) barrier layer has been investigated through physical and electrical analysis as a way to control the interfacial layer on Si and III-V substrates recently. In this paper, a theoretical model is suggested to find the most promising gate dielectric based on electromagnetic interactions between the channel carrier and atoms in the gate dielectric, as well as the structural stability of the gate dielectric. Using this model, Al 2O 3, BeO, SiO 2, and HfO 2 were evaluated as gate dielectrics for Si and III-V metal oxide semiconductor devices.

AB - The effectiveness of an atomic layer deposited beryllium oxide (BeO) barrier layer has been investigated through physical and electrical analysis as a way to control the interfacial layer on Si and III-V substrates recently. In this paper, a theoretical model is suggested to find the most promising gate dielectric based on electromagnetic interactions between the channel carrier and atoms in the gate dielectric, as well as the structural stability of the gate dielectric. Using this model, Al 2O 3, BeO, SiO 2, and HfO 2 were evaluated as gate dielectrics for Si and III-V metal oxide semiconductor devices.

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Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability

Abstract

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