Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs

Jae Eun Seo; Dongwook Seo; Jiwon Chang

doi:10.1109/TED.2019.2956992

Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs

Jae Eun Seo, Dongwook Seo, Jiwon Chang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Recently, mono-elemental 2-D material black arsenic (BA), related to black phosphorus (BP), with better ambient stability and possibly higher mobility than BP has been demonstrated as a channel material in metal-oxide-semiconductor field effect transistors (MOSFETs). Here, we present a theoretical study on ballistic current transport in n-and p-MOSFETs based on monolayer BA. Monolayer BA has very similar band structures with monolayer BP which is characterized by the highly anisotropic Γ valley, but with the addition of other degenerate valleys (Δ valleys) near Γ valley. We examine the role of Γ and Δ valleys in current transport of monolayer BA MOSFETs through valley-resolved quantum transport simulations. The effects of different transport directions and the device scaling are also discussed with the benchmarking against monolayer BP MOSFETs.

Original language	English
Article number	8948359
Pages (from-to)	622-626
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	2
DOIs	https://doi.org/10.1109/TED.2019.2956992
Publication status	Published - 2020 Feb

Bibliographical note

Funding Information:
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, Information and Communication Technology (ICT) and Future Planning under Grant 2017R1C1B5015940.

Funding Information:
Manuscript received November 11, 2019; revised November 24, 2019; accepted November 27, 2019. Date of publication January 1, 2020; date of current version January 27, 2020. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, Information and Communication Technology (ICT) and Future Planning under Grant 2017R1C1B5015940. The review of this article was arranged by Editor J. Mateos. (Corresponding author: Jiwon Chang.) The authors are with the Department of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea (e-mail: jiwon.chang@unist.ac.kr).

Publisher Copyright:
© 1963-2012 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2019.2956992

Cite this

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title = "Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs",

abstract = "Recently, mono-elemental 2-D material black arsenic (BA), related to black phosphorus (BP), with better ambient stability and possibly higher mobility than BP has been demonstrated as a channel material in metal-oxide-semiconductor field effect transistors (MOSFETs). Here, we present a theoretical study on ballistic current transport in n-and p-MOSFETs based on monolayer BA. Monolayer BA has very similar band structures with monolayer BP which is characterized by the highly anisotropic Γ valley, but with the addition of other degenerate valleys (Δ valleys) near Γ valley. We examine the role of Γ and Δ valleys in current transport of monolayer BA MOSFETs through valley-resolved quantum transport simulations. The effects of different transport directions and the device scaling are also discussed with the benchmarking against monolayer BP MOSFETs.",

author = "Seo, {Jae Eun} and Dongwook Seo and Jiwon Chang",

note = "Funding Information: This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, Information and Communication Technology (ICT) and Future Planning under Grant 2017R1C1B5015940. Funding Information: Manuscript received November 11, 2019; revised November 24, 2019; accepted November 27, 2019. Date of publication January 1, 2020; date of current version January 27, 2020. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, Information and Communication Technology (ICT) and Future Planning under Grant 2017R1C1B5015940. The review of this article was arranged by Editor J. Mateos. (Corresponding author: Jiwon Chang.) The authors are with the Department of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea (e-mail: jiwon.chang@unist.ac.kr). Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs

Abstract

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