The study of workfunction measurement method for bilayer metal gate electrode using XPS

E. J. Jung; C. J. Yim; I. S. Yang; H. J. Chang; S. W. Cho; M. H. Cho; D. H. Ko

doi:10.1149/1.2911499

The study of workfunction measurement method for bilayer metal gate electrode using XPS

E. J. Jung, C. J. Yim, I. S. Yang, H. J. Chang, S. W. Cho, M. H. Cho, D. H. Ko

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

An Al-Ti bi-layer was deposited by D.C. magnetron sputtering and annealed by RTA at 500°C 10s in an N₂ ambient. After RTA, the Al ₃Ti alloy layer was formed at the Al/Ti interface. The XPS/UPS depth-profile was performed in other to measure workfunction. The workfunctíon of AL₃Ti layer is measured to be about 4.67 eV.

Original language	English
Title of host publication	ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
Subtitle of host publication	New Materials, Processes, and Equipment
Pages	187-191
Number of pages	5
Edition	1
DOIs	https://doi.org/10.1149/1.2911499
Publication status	Published - 2008
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States Duration: 2008 May 18 → 2008 May 22

Publication series

Name	ECS Transactions
Number	1
Volume	13
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
Country/Territory	United States
City	Phoenix, AZ
Period	08/5/18 → 08/5/22

All Science Journal Classification (ASJC) codes

General Engineering

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10.1149/1.2911499

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Jung, E. J., Yim, C. J., Yang, I. S., Chang, H. J., Cho, S. W., Cho, M. H., & Ko, D. H. (2008). The study of workfunction measurement method for bilayer metal gate electrode using XPS. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment (1 ed., pp. 187-191). (ECS Transactions; Vol. 13, No. 1). https://doi.org/10.1149/1.2911499

@inproceedings{aedb1a34e75e42b6bf16cecfd35e7c0f,

title = "The study of workfunction measurement method for bilayer metal gate electrode using XPS",

abstract = "An Al-Ti bi-layer was deposited by D.C. magnetron sputtering and annealed by RTA at 500°C 10s in an N2 ambient. After RTA, the Al 3Ti alloy layer was formed at the Al/Ti interface. The XPS/UPS depth-profile was performed in other to measure workfunction. The workfunct{\'i}on of AL3Ti layer is measured to be about 4.67 eV.",

author = "Jung, {E. J.} and Yim, {C. J.} and Yang, {I. S.} and Chang, {H. J.} and Cho, {S. W.} and Cho, {M. H.} and Ko, {D. H.}",

year = "2008",

doi = "10.1149/1.2911499",

language = "English",

isbn = "9781566776264",

series = "ECS Transactions",

number = "1",

pages = "187--191",

booktitle = "ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4",

edition = "1",

note = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 ; Conference date: 18-05-2008 Through 22-05-2008",

}

Jung, EJ, Yim, CJ, Yang, IS, Chang, HJ, Cho, SW , Cho, MH & Ko, DH 2008, The study of workfunction measurement method for bilayer metal gate electrode using XPS. in ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 13, pp. 187-191, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4, Phoenix, AZ, United States, 08/5/18. https://doi.org/10.1149/1.2911499

The study of workfunction measurement method for bilayer metal gate electrode using XPS. / Jung, E. J.; Yim, C. J.; Yang, I. S. et al.
ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1. ed. 2008. p. 187-191 (ECS Transactions; Vol. 13, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - The study of workfunction measurement method for bilayer metal gate electrode using XPS

AU - Jung, E. J.

AU - Yim, C. J.

AU - Yang, I. S.

AU - Chang, H. J.

AU - Cho, S. W.

AU - Cho, M. H.

AU - Ko, D. H.

PY - 2008

Y1 - 2008

N2 - An Al-Ti bi-layer was deposited by D.C. magnetron sputtering and annealed by RTA at 500°C 10s in an N2 ambient. After RTA, the Al 3Ti alloy layer was formed at the Al/Ti interface. The XPS/UPS depth-profile was performed in other to measure workfunction. The workfunctíon of AL3Ti layer is measured to be about 4.67 eV.

AB - An Al-Ti bi-layer was deposited by D.C. magnetron sputtering and annealed by RTA at 500°C 10s in an N2 ambient. After RTA, the Al 3Ti alloy layer was formed at the Al/Ti interface. The XPS/UPS depth-profile was performed in other to measure workfunction. The workfunctíon of AL3Ti layer is measured to be about 4.67 eV.

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DO - 10.1149/1.2911499

M3 - Conference contribution

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BT - ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4

T2 - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4

Y2 - 18 May 2008 through 22 May 2008

ER -

The study of workfunction measurement method for bilayer metal gate electrode using XPS

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