TY - GEN
T1 - The study of hafnium silicate by various nitrogen gas annealing treatment
AU - Dong, Chan Suh
AU - Kwun, Bum Chung
AU - Cho, Mann Ho
AU - Young, Dae Cho
AU - Ko, Dae Hong
PY - 2008
Y1 - 2008
N2 - Post annealing of Hf-silicate thin film grown by ALD was done with different kind of nitrogen gas and order of annealing. Annealing conditions are as follows: (1) NO gas only, (2) NH3 gas only, (3) NO gas + NH 3 gas, and (4) NH3 + NO gas. With these conditions, the physical and electrical properties of nitrided Hf-silicate films were analyzed. Content of nitrogen is decreased with post NO gas annealing, In case of NH 3, content of nitrogen is much higher than NO case. Most nitrogen atoms were distributed between Si substrate and Hf-silicate film for NO gas annealing. However, with NH3 gas annealing, nitrogen atoms were distributed in the whole Hf-silicate film evenly. Leakage current was decreased with post NO gas annealing and flat band voltage was also decreased.
AB - Post annealing of Hf-silicate thin film grown by ALD was done with different kind of nitrogen gas and order of annealing. Annealing conditions are as follows: (1) NO gas only, (2) NH3 gas only, (3) NO gas + NH 3 gas, and (4) NH3 + NO gas. With these conditions, the physical and electrical properties of nitrided Hf-silicate films were analyzed. Content of nitrogen is decreased with post NO gas annealing, In case of NH 3, content of nitrogen is much higher than NO case. Most nitrogen atoms were distributed between Si substrate and Hf-silicate film for NO gas annealing. However, with NH3 gas annealing, nitrogen atoms were distributed in the whole Hf-silicate film evenly. Leakage current was decreased with post NO gas annealing and flat band voltage was also decreased.
UR - http://www.scopus.com/inward/record.url?scp=70350320559&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70350320559&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:70350320559
SN - 9781605608532
T3 - Materials Research Society Symposium Proceedings
SP - 68
EP - 72
BT - Materials Science of High-K Dielectric Stacks - From Fundamentals to Technology
T2 - 2008 MRS Spring Meeting
Y2 - 24 March 2008 through 28 March 2008
ER -