The study of dielectric constant change of a-SiC:H films deposited by remote PECVD with low deposition temperatures

a-SiOC:H films were deposited by using a remote Plasma Enhanced Chemical Vapor Deposition (PECVD) system with HMDS (Hexamethyldisilane) as a precursor. The H2 gas and the C2H2 gas were used as carrier gas and dilution gas, respectively. The flow rate of C2H2 gas was fixed at 3 seem. The deposition temperature was varied between 100° to 200° to study the effect of temperature on the film stoichiometry and bonding properties, which can affect changes in the dielectric constant of the deposited films. A Rapid Thermal Annealing (RTA) treatment was conducted to determine the thermal stability and any changes in the dielectric constant. A change in carbon hybridization bonds caused by different deposition temperatures played an important role in the changes in the dielectric constant.