The stability of oxide TFTs under electrical gate bias and monochromatic light illumination

Soo Yeon Lee, Sun Jae Kim, Young Wook Lee, Sang Geun Park, Jang Yeon Kwon, Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)


We have investigated a stability of oxide TFTs (IGZO) under electrical bias and monochromatic light illumination. Under -20 V gate bias, when 650 nm monochromatic illumination with intensity of 1 mW/cm2 was radiated, threshold voltage (Vth) was shifted by about -1.55 V while V th was almost constant without illumination. Even though the photon energy of 650 nm is much smaller than optical band gap of oxide active layer (Eopt∼3.0 eV), Vth was changed due to generation of carriers through localized state. However, under positive gate bias of 20 V, Vth was not changed with and without 650 nm light illumination. In terms of 300 nm wavelength light, Vth was shifted positively under negative bias stress and negatively under positive bias stress. It is considered that light affected not only the active layer but also the gate insulator layer.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
PublisherElectrochemical Society Inc.
Number of pages6
ISBN (Electronic)9781607681748
ISBN (Print)9781566778244
Publication statusPublished - 2010

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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