A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na+ ions was used to create a field-effect transistor based memory device. Addition of Na+ ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry