Abstract
A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na+ ions was used to create a field-effect transistor based memory device. Addition of Na+ ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device.
Original language | English |
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Pages (from-to) | 4112-4114 |
Number of pages | 3 |
Journal | Chemical Communications |
Volume | 50 |
Issue number | 31 |
DOIs | |
Publication status | Published - 2014 Mar 20 |
All Science Journal Classification (ASJC) codes
- Catalysis
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Chemistry(all)
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry