The simulation of copper drift in SiO2 during bias temperature stress (BTS) test

Jang Yeon Kwon, Ki Su Kim, Young Chang Joo, Ki Bum Kim

Research output: Contribution to journalConference articlepeer-review


In order to develop a reliable interconnect integration scheme by using Cu in ultra large scale integrated devices (ULSI), the evolutions of the concentration profile of copper ions in SiO2 was simulated under bias temperature stress (BTS) test. Diffusion equation was solved numerically in two electric field modes. One is constant electric field mode where copper drift was simulated with the assumption that electric field is constant within SiO2 film. In variable electric field mode, simulation was carried out considering the variation of electric field in SiO2 due to copper ions. The diffusion of copper ions in variable electric field mode is slower than that in constant electric field mode, because copper ions in SiO2 reduce electric field near the interface between Cu and SiO2. Flatband voltage shift (ΔVFB,) increases parabolically as BTS time increases in constant electric field mode. However, it has linear relation with BTS time in variable electric field mode, which is typically observed in experiments.

Original languageEnglish
Pages (from-to)129-134
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2002
EventModeling and Numerical Simulation of Materials Behavior and Evolution - San Francisco, CA, United States
Duration: 2002 Apr 22002 Apr 5

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'The simulation of copper drift in SiO2 during bias temperature stress (BTS) test'. Together they form a unique fingerprint.

Cite this