The simulation of copper drift in SiO2 during bias temperature stress (BTS) test

Jang Yeon Kwon; Ki Su Kim; Young Chang Joo; Ki Bum Kim

doi:10.1557/proc-731-w8.17

The simulation of copper drift in SiO₂ during bias temperature stress (BTS) test

Jang Yeon Kwon, Ki Su Kim, Young Chang Joo, Ki Bum Kim

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

In order to develop a reliable interconnect integration scheme by using Cu in ultra large scale integrated devices (ULSI), the evolutions of the concentration profile of copper ions in SiO₂ was simulated under bias temperature stress (BTS) test. Diffusion equation was solved numerically in two electric field modes. One is constant electric field mode where copper drift was simulated with the assumption that electric field is constant within SiO₂ film. In variable electric field mode, simulation was carried out considering the variation of electric field in SiO₂ due to copper ions. The diffusion of copper ions in variable electric field mode is slower than that in constant electric field mode, because copper ions in SiO₂ reduce electric field near the interface between Cu and SiO₂. Flatband voltage shift (ΔV_FB,) increases parabolically as BTS time increases in constant electric field mode. However, it has linear relation with BTS time in variable electric field mode, which is typically observed in experiments.

Original language	English
Pages (from-to)	129-134
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	731
DOIs	https://doi.org/10.1557/proc-731-w8.17
Publication status	Published - 2002
Event	Modeling and Numerical Simulation of Materials Behavior and Evolution - San Francisco, CA, United States Duration: 2002 Apr 2 → 2002 Apr 5

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-731-w8.17

Cite this

@article{bf4d43b22def4c1c960f977203e23685,

title = "The simulation of copper drift in SiO2 during bias temperature stress (BTS) test",

abstract = "In order to develop a reliable interconnect integration scheme by using Cu in ultra large scale integrated devices (ULSI), the evolutions of the concentration profile of copper ions in SiO2 was simulated under bias temperature stress (BTS) test. Diffusion equation was solved numerically in two electric field modes. One is constant electric field mode where copper drift was simulated with the assumption that electric field is constant within SiO2 film. In variable electric field mode, simulation was carried out considering the variation of electric field in SiO2 due to copper ions. The diffusion of copper ions in variable electric field mode is slower than that in constant electric field mode, because copper ions in SiO2 reduce electric field near the interface between Cu and SiO2. Flatband voltage shift (ΔVFB,) increases parabolically as BTS time increases in constant electric field mode. However, it has linear relation with BTS time in variable electric field mode, which is typically observed in experiments.",

author = "Kwon, {Jang Yeon} and Kim, {Ki Su} and Joo, {Young Chang} and Kim, {Ki Bum}",

year = "2002",

doi = "10.1557/proc-731-w8.17",

language = "English",

volume = "731",

pages = "129--134",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Modeling and Numerical Simulation of Materials Behavior and Evolution ; Conference date: 02-04-2002 Through 05-04-2002",

}

TY - JOUR

T1 - The simulation of copper drift in SiO2 during bias temperature stress (BTS) test

AU - Kwon, Jang Yeon

AU - Kim, Ki Su

AU - Joo, Young Chang

AU - Kim, Ki Bum

PY - 2002

Y1 - 2002

N2 - In order to develop a reliable interconnect integration scheme by using Cu in ultra large scale integrated devices (ULSI), the evolutions of the concentration profile of copper ions in SiO2 was simulated under bias temperature stress (BTS) test. Diffusion equation was solved numerically in two electric field modes. One is constant electric field mode where copper drift was simulated with the assumption that electric field is constant within SiO2 film. In variable electric field mode, simulation was carried out considering the variation of electric field in SiO2 due to copper ions. The diffusion of copper ions in variable electric field mode is slower than that in constant electric field mode, because copper ions in SiO2 reduce electric field near the interface between Cu and SiO2. Flatband voltage shift (ΔVFB,) increases parabolically as BTS time increases in constant electric field mode. However, it has linear relation with BTS time in variable electric field mode, which is typically observed in experiments.

AB - In order to develop a reliable interconnect integration scheme by using Cu in ultra large scale integrated devices (ULSI), the evolutions of the concentration profile of copper ions in SiO2 was simulated under bias temperature stress (BTS) test. Diffusion equation was solved numerically in two electric field modes. One is constant electric field mode where copper drift was simulated with the assumption that electric field is constant within SiO2 film. In variable electric field mode, simulation was carried out considering the variation of electric field in SiO2 due to copper ions. The diffusion of copper ions in variable electric field mode is slower than that in constant electric field mode, because copper ions in SiO2 reduce electric field near the interface between Cu and SiO2. Flatband voltage shift (ΔVFB,) increases parabolically as BTS time increases in constant electric field mode. However, it has linear relation with BTS time in variable electric field mode, which is typically observed in experiments.

UR - http://www.scopus.com/inward/record.url?scp=0036454399&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036454399&partnerID=8YFLogxK

U2 - 10.1557/proc-731-w8.17

DO - 10.1557/proc-731-w8.17

M3 - Conference article

AN - SCOPUS:0036454399

SN - 0272-9172

VL - 731

SP - 129

EP - 134

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Modeling and Numerical Simulation of Materials Behavior and Evolution

Y2 - 2 April 2002 through 5 April 2002

ER -

The simulation of copper drift in SiO₂ during bias temperature stress (BTS) test

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this