The Precursor Adsorption Mechanism, Growth Characteristics and Electrical Properties of Plasma-Enhanced Atomic Layer Deposited Tungsten Films by Using Tungsten Chloride Precursors

Seunggi Seo; Yujin Lee; Il Kwon Oh; Bonggeun Shong; Hwi Yoon; Sanghun Lee; Hyungjun Kim

doi:10.1109/IITC47697.2020.9515589

The Precursor Adsorption Mechanism, Growth Characteristics and Electrical Properties of Plasma-Enhanced Atomic Layer Deposited Tungsten Films by Using Tungsten Chloride Precursors

Seunggi Seo, Yujin Lee, Il Kwon Oh, Bonggeun Shong, Hwi Yoon, Sanghun Lee, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Atomic layer deposited tungsten (W) films has been widely used in widespread applications due to its good characteristics such as low resistivity, high thermal and chemical stability. WF6 is the most commonly used precursor for vapor deposition of W. Hydrofluoric acid (HF) byproduct, etching of substrate and diffusion of fluorine could degrade device performance. To overcome these issues fluorine-free tungsten precursors have recently received attention. In this work, we fundamentally investigated PE-ALD process of W by using tungsten chloride (WClx) precursor and argon and hydrogen plasma. Developed W process could deposit W films with low Cl impurity and low resistivity.

Original language	English
Title of host publication	2020 IEEE International Interconnect Technology Conference, IITC 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	103-105
Number of pages	3
ISBN (Electronic)	9781728161136
DOIs	https://doi.org/10.1109/IITC47697.2020.9515589
Publication status	Published - 2020 Oct 5
Event	2020 IEEE International Interconnect Technology Conference, IITC 2020 - Virtual, San Jose, United States Duration: 2020 Oct 5 → 2020 Oct 9

Publication series

Name	2020 IEEE International Interconnect Technology Conference, IITC 2020

Conference

Conference	2020 IEEE International Interconnect Technology Conference, IITC 2020
Country/Territory	United States
City	Virtual, San Jose
Period	20/10/5 → 20/10/9

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Metals and Alloys
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IITC47697.2020.9515589

Cite this

Seo, S., Lee, Y., Oh, I. K., Shong, B., Yoon, H., Lee, S., & Kim, H. (2020). The Precursor Adsorption Mechanism, Growth Characteristics and Electrical Properties of Plasma-Enhanced Atomic Layer Deposited Tungsten Films by Using Tungsten Chloride Precursors. In 2020 IEEE International Interconnect Technology Conference, IITC 2020 (pp. 103-105). (2020 IEEE International Interconnect Technology Conference, IITC 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC47697.2020.9515589

Seo, Seunggi ; Lee, Yujin ; Oh, Il Kwon et al. / The Precursor Adsorption Mechanism, Growth Characteristics and Electrical Properties of Plasma-Enhanced Atomic Layer Deposited Tungsten Films by Using Tungsten Chloride Precursors. 2020 IEEE International Interconnect Technology Conference, IITC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 103-105 (2020 IEEE International Interconnect Technology Conference, IITC 2020).

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title = "The Precursor Adsorption Mechanism, Growth Characteristics and Electrical Properties of Plasma-Enhanced Atomic Layer Deposited Tungsten Films by Using Tungsten Chloride Precursors",

abstract = "Atomic layer deposited tungsten (W) films has been widely used in widespread applications due to its good characteristics such as low resistivity, high thermal and chemical stability. WF6 is the most commonly used precursor for vapor deposition of W. Hydrofluoric acid (HF) byproduct, etching of substrate and diffusion of fluorine could degrade device performance. To overcome these issues fluorine-free tungsten precursors have recently received attention. In this work, we fundamentally investigated PE-ALD process of W by using tungsten chloride (WClx) precursor and argon and hydrogen plasma. Developed W process could deposit W films with low Cl impurity and low resistivity.",

keywords = "Density Functional Theory, Tungsten chloride precursor, W films, fluorine free tungsten, plasma-enhanced atomic layer deposition (PE-ALD)",

author = "Seunggi Seo and Yujin Lee and Oh, {Il Kwon} and Bonggeun Shong and Hwi Yoon and Sanghun Lee and Hyungjun Kim",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE International Interconnect Technology Conference, IITC 2020 ; Conference date: 05-10-2020 Through 09-10-2020",

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doi = "10.1109/IITC47697.2020.9515589",

language = "English",

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Seo, S, Lee, Y, Oh, IK, Shong, B, Yoon, H, Lee, S & Kim, H 2020, The Precursor Adsorption Mechanism, Growth Characteristics and Electrical Properties of Plasma-Enhanced Atomic Layer Deposited Tungsten Films by Using Tungsten Chloride Precursors. in 2020 IEEE International Interconnect Technology Conference, IITC 2020. 2020 IEEE International Interconnect Technology Conference, IITC 2020, Institute of Electrical and Electronics Engineers Inc., pp. 103-105, 2020 IEEE International Interconnect Technology Conference, IITC 2020, Virtual, San Jose, United States, 20/10/5. https://doi.org/10.1109/IITC47697.2020.9515589

The Precursor Adsorption Mechanism, Growth Characteristics and Electrical Properties of Plasma-Enhanced Atomic Layer Deposited Tungsten Films by Using Tungsten Chloride Precursors. / Seo, Seunggi; Lee, Yujin; Oh, Il Kwon et al.
2020 IEEE International Interconnect Technology Conference, IITC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 103-105 (2020 IEEE International Interconnect Technology Conference, IITC 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Shong, Bonggeun

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AB - Atomic layer deposited tungsten (W) films has been widely used in widespread applications due to its good characteristics such as low resistivity, high thermal and chemical stability. WF6 is the most commonly used precursor for vapor deposition of W. Hydrofluoric acid (HF) byproduct, etching of substrate and diffusion of fluorine could degrade device performance. To overcome these issues fluorine-free tungsten precursors have recently received attention. In this work, we fundamentally investigated PE-ALD process of W by using tungsten chloride (WClx) precursor and argon and hydrogen plasma. Developed W process could deposit W films with low Cl impurity and low resistivity.

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Seo S, Lee Y, Oh IK, Shong B, Yoon H, Lee S et al. The Precursor Adsorption Mechanism, Growth Characteristics and Electrical Properties of Plasma-Enhanced Atomic Layer Deposited Tungsten Films by Using Tungsten Chloride Precursors. In 2020 IEEE International Interconnect Technology Conference, IITC 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 103-105. (2020 IEEE International Interconnect Technology Conference, IITC 2020). doi: 10.1109/IITC47697.2020.9515589

The Precursor Adsorption Mechanism, Growth Characteristics and Electrical Properties of Plasma-Enhanced Atomic Layer Deposited Tungsten Films by Using Tungsten Chloride Precursors

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

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