The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy

S. Park; H. Han; R. Kaiser; T. Werninghaus; A. Schneider; D. Drews; D. R.T. Zahn

doi:10.1063/1.368203

The phototransformation of C₆₀ thin films on GaAs(100) studied by in situ Raman spectroscopy

S. Park, H. Han, R. Kaiser, T. Werninghaus, A. Schneider, D. Drews, D. R.T. Zahn

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Raman spectra in the region of the pentagonal pinch mode A_g(2) of C₆₀ were taken in situ during the deposition of C₆₀ on the GaAs(100) surface at different temperatures. For very low coverages, only the feature corresponding to the pentagonal pinch mode of pristine C₆₀ is visible. The onset of polymerization under laser irradiation occurred at thicknesses of about 15 nm which is attributed to a suppressive effect on the polymerization process due to the interaction of C₆₀ with the substrate surface. The line shape for the feature due to photopolymerized C₆₀ was different at each temperature indicating distinct polymeric states at different temperatures. These different states are discussed in comparison to recent theoretical calculations. Additionally, the photopolymerization due to irradiation after growth was investigated in situ.

Original language	English
Pages (from-to)	1340-1345
Number of pages	6
Journal	Journal of Applied Physics
Volume	84
Issue number	3
DOIs	https://doi.org/10.1063/1.368203
Publication status	Published - 1998 Aug 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.368203

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title = "The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy",

abstract = "Raman spectra in the region of the pentagonal pinch mode Ag(2) of C60 were taken in situ during the deposition of C60 on the GaAs(100) surface at different temperatures. For very low coverages, only the feature corresponding to the pentagonal pinch mode of pristine C60 is visible. The onset of polymerization under laser irradiation occurred at thicknesses of about 15 nm which is attributed to a suppressive effect on the polymerization process due to the interaction of C60 with the substrate surface. The line shape for the feature due to photopolymerized C60 was different at each temperature indicating distinct polymeric states at different temperatures. These different states are discussed in comparison to recent theoretical calculations. Additionally, the photopolymerization due to irradiation after growth was investigated in situ.",

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T1 - The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy

AU - Park, S.

AU - Han, H.

AU - Kaiser, R.

AU - Werninghaus, T.

AU - Schneider, A.

AU - Drews, D.

AU - Zahn, D. R.T.

PY - 1998/8/1

Y1 - 1998/8/1

N2 - Raman spectra in the region of the pentagonal pinch mode Ag(2) of C60 were taken in situ during the deposition of C60 on the GaAs(100) surface at different temperatures. For very low coverages, only the feature corresponding to the pentagonal pinch mode of pristine C60 is visible. The onset of polymerization under laser irradiation occurred at thicknesses of about 15 nm which is attributed to a suppressive effect on the polymerization process due to the interaction of C60 with the substrate surface. The line shape for the feature due to photopolymerized C60 was different at each temperature indicating distinct polymeric states at different temperatures. These different states are discussed in comparison to recent theoretical calculations. Additionally, the photopolymerization due to irradiation after growth was investigated in situ.

AB - Raman spectra in the region of the pentagonal pinch mode Ag(2) of C60 were taken in situ during the deposition of C60 on the GaAs(100) surface at different temperatures. For very low coverages, only the feature corresponding to the pentagonal pinch mode of pristine C60 is visible. The onset of polymerization under laser irradiation occurred at thicknesses of about 15 nm which is attributed to a suppressive effect on the polymerization process due to the interaction of C60 with the substrate surface. The line shape for the feature due to photopolymerized C60 was different at each temperature indicating distinct polymeric states at different temperatures. These different states are discussed in comparison to recent theoretical calculations. Additionally, the photopolymerization due to irradiation after growth was investigated in situ.

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The phototransformation of C₆₀ thin films on GaAs(100) studied by in situ Raman spectroscopy

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