Concerning the oxidation behavior of Si 1-xGex (x = 0.15, 0.3) nanowires at high temperature, Si 1-xGex nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si 1-xGex thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si 1-xGex and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si 1-xGex nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.
All Science Journal Classification (ASJC) codes
- General Chemistry
- Biomedical Engineering
- General Materials Science
- Condensed Matter Physics