The origin of the resistance change in GeSbTe films

Moon Hyung Jang; Seung Jong Park; Sung Jin Park; Mann Ho Cho; E. Z. Kurmaev; L. D. Finkelstein; Gap Soo Chang

doi:10.1063/1.3499751

The origin of the resistance change in GeSbTe films

Moon Hyung Jang, Seung Jong Park, Sung Jin Park, Mann Ho Cho, E. Z. Kurmaev, L. D. Finkelstein, Gap Soo Chang

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Amorphous Ge₂ Sb₂ Te₅ (a-GST) films were deposited by ion beam sputtering deposition. Extended x-ray absorption fine structure (EXAFS) data confirmed the existence of the Ge-Ge homopolar bonds in the films. Raman spectra also indicated that the Ge tetrahedral coordination in the a-GST film disappeared after an annealing treatment above 220 °C. Resonantly excited Ge L2,3 x-ray emission spectra (which probe occupied Ge 3d4s -electronic states) show that the phase change from the amorphous to crystalline state is accompanied by a reduction in the Ge I (L₂)/I (L ₃) intensity ratio due to a L₂ L₃ N Coster-Kronig transition, indicating that the number of carriers is increased in the Ge 4sp valence state. These findings constitute direct evidence for the contribution of the Ge electronic states to the resistivity change.

Original language	English
Article number	152113
Journal	Applied Physics Letters
Volume	97
Issue number	15
DOIs	https://doi.org/10.1063/1.3499751
Publication status	Published - 2010 Oct 11

Bibliographical note

Funding Information:
This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea, and a joint program between Yonsei University-Hynix Semiconductor Inc. We also acknowledge support from the National Sciences and Engineering Research Council of Canada (NSERC). E.Z. acknowledges support of the Russian Science Foundation for Basic Research (Project No. 08-02-00148) and the Research Council of the President of the Russian Federation (Grant No. NSH-3572.2010.2).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{5611c37ba50941b19ef91d928b94204c,

title = "The origin of the resistance change in GeSbTe films",

abstract = "Amorphous Ge2 Sb2 Te5 (a-GST) films were deposited by ion beam sputtering deposition. Extended x-ray absorption fine structure (EXAFS) data confirmed the existence of the Ge-Ge homopolar bonds in the films. Raman spectra also indicated that the Ge tetrahedral coordination in the a-GST film disappeared after an annealing treatment above 220 °C. Resonantly excited Ge L2,3 x-ray emission spectra (which probe occupied Ge 3d4s -electronic states) show that the phase change from the amorphous to crystalline state is accompanied by a reduction in the Ge I (L2)/I (L 3) intensity ratio due to a L2 L3 N Coster-Kronig transition, indicating that the number of carriers is increased in the Ge 4sp valence state. These findings constitute direct evidence for the contribution of the Ge electronic states to the resistivity change.",

author = "Jang, {Moon Hyung} and Park, {Seung Jong} and Park, {Sung Jin} and Cho, {Mann Ho} and Kurmaev, {E. Z.} and Finkelstein, {L. D.} and Chang, {Gap Soo}",

note = "Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea, and a joint program between Yonsei University-Hynix Semiconductor Inc. We also acknowledge support from the National Sciences and Engineering Research Council of Canada (NSERC). E.Z. acknowledges support of the Russian Science Foundation for Basic Research (Project No. 08-02-00148) and the Research Council of the President of the Russian Federation (Grant No. NSH-3572.2010.2).",

year = "2010",

month = oct,

day = "11",

doi = "10.1063/1.3499751",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - The origin of the resistance change in GeSbTe films

AU - Jang, Moon Hyung

AU - Park, Seung Jong

AU - Park, Sung Jin

AU - Cho, Mann Ho

AU - Kurmaev, E. Z.

AU - Finkelstein, L. D.

AU - Chang, Gap Soo

N1 - Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea, and a joint program between Yonsei University-Hynix Semiconductor Inc. We also acknowledge support from the National Sciences and Engineering Research Council of Canada (NSERC). E.Z. acknowledges support of the Russian Science Foundation for Basic Research (Project No. 08-02-00148) and the Research Council of the President of the Russian Federation (Grant No. NSH-3572.2010.2).

PY - 2010/10/11

Y1 - 2010/10/11

N2 - Amorphous Ge2 Sb2 Te5 (a-GST) films were deposited by ion beam sputtering deposition. Extended x-ray absorption fine structure (EXAFS) data confirmed the existence of the Ge-Ge homopolar bonds in the films. Raman spectra also indicated that the Ge tetrahedral coordination in the a-GST film disappeared after an annealing treatment above 220 °C. Resonantly excited Ge L2,3 x-ray emission spectra (which probe occupied Ge 3d4s -electronic states) show that the phase change from the amorphous to crystalline state is accompanied by a reduction in the Ge I (L2)/I (L 3) intensity ratio due to a L2 L3 N Coster-Kronig transition, indicating that the number of carriers is increased in the Ge 4sp valence state. These findings constitute direct evidence for the contribution of the Ge electronic states to the resistivity change.

AB - Amorphous Ge2 Sb2 Te5 (a-GST) films were deposited by ion beam sputtering deposition. Extended x-ray absorption fine structure (EXAFS) data confirmed the existence of the Ge-Ge homopolar bonds in the films. Raman spectra also indicated that the Ge tetrahedral coordination in the a-GST film disappeared after an annealing treatment above 220 °C. Resonantly excited Ge L2,3 x-ray emission spectra (which probe occupied Ge 3d4s -electronic states) show that the phase change from the amorphous to crystalline state is accompanied by a reduction in the Ge I (L2)/I (L 3) intensity ratio due to a L2 L3 N Coster-Kronig transition, indicating that the number of carriers is increased in the Ge 4sp valence state. These findings constitute direct evidence for the contribution of the Ge electronic states to the resistivity change.

UR - http://www.scopus.com/inward/record.url?scp=77958081790&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958081790&partnerID=8YFLogxK

U2 - 10.1063/1.3499751

DO - 10.1063/1.3499751

M3 - Article

AN - SCOPUS:77958081790

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152113

ER -

The origin of the resistance change in GeSbTe films

Abstract

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