The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/ N, N′ -bis(1-naphthyl)- N, N′ -diphenyl- 1, 1′ -biphenyl- 4, 4′ -diamine interfaces

Hyunbok Lee; Sang Wan Cho; Kyul Han; Pyung Eun Jeon; Chung Nam Whang; Kwangho Jeong; Kwanghee Cho; Yeonjin Yi

doi:10.1063/1.2965120

The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/ N, N′ -bis(1-naphthyl)- N, N′ -diphenyl- 1, 1′ -biphenyl- 4, 4′ -diamine interfaces

Hyunbok Lee, Sang Wan Cho, Kyul Han, Pyung Eun Jeon, Chung Nam Whang, Kwangho Jeong, Kwanghee Cho, Yeonjin Yi

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Abstract

We investigated the interfacial electronic structures of indium tin oxide (ITO)/molybdenum trioxide (MoO3) /N, N′ -bis(1-naphthyl)- N, N′ -diphenyl- 1, 1′ -biphenyl- 4, 4′ -diamine (NPB) using in situ ultraviolet and x-ray photoemission spectroscopy to understand the origin of hole injection improvements in organic light-emitting devices (OLEDs). Inserting a MoO3 layer between ITO and NPB, the hole injection barrier was remarkably reduced. Moreover, a gap state in the band gap of NPB was found which assisted the Ohmic hole injection at the interface. The hole injection barrier lowering and Ohmic injection explain why the OLED in combination with MoO3 showed improved performance.

Original language	English
Article number	043308
Journal	Applied Physics Letters
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.2965120
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by Institute of Physics and Applied Physics (IPAP), Yonsei University, and BK21 project of the Korea Research Foundation (KRF).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2965120

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title = "The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/ N, N′ -bis(1-naphthyl)- N, N′ -diphenyl- 1, 1′ -biphenyl- 4, 4′ -diamine interfaces",

abstract = "We investigated the interfacial electronic structures of indium tin oxide (ITO)/molybdenum trioxide (MoO3) /N, N′ -bis(1-naphthyl)- N, N′ -diphenyl- 1, 1′ -biphenyl- 4, 4′ -diamine (NPB) using in situ ultraviolet and x-ray photoemission spectroscopy to understand the origin of hole injection improvements in organic light-emitting devices (OLEDs). Inserting a MoO3 layer between ITO and NPB, the hole injection barrier was remarkably reduced. Moreover, a gap state in the band gap of NPB was found which assisted the Ohmic hole injection at the interface. The hole injection barrier lowering and Ohmic injection explain why the OLED in combination with MoO3 showed improved performance.",

author = "Hyunbok Lee and Cho, {Sang Wan} and Kyul Han and Jeon, {Pyung Eun} and Whang, {Chung Nam} and Kwangho Jeong and Kwanghee Cho and Yeonjin Yi",

note = "Funding Information: This work was supported by Institute of Physics and Applied Physics (IPAP), Yonsei University, and BK21 project of the Korea Research Foundation (KRF). ",

year = "2008",

doi = "10.1063/1.2965120",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/ N, N′ -bis(1-naphthyl)- N, N′ -diphenyl- 1, 1′ -biphenyl- 4, 4′ -diamine interfaces

AU - Lee, Hyunbok

AU - Cho, Sang Wan

AU - Han, Kyul

AU - Jeon, Pyung Eun

AU - Whang, Chung Nam

AU - Jeong, Kwangho

AU - Cho, Kwanghee

AU - Yi, Yeonjin

N1 - Funding Information: This work was supported by Institute of Physics and Applied Physics (IPAP), Yonsei University, and BK21 project of the Korea Research Foundation (KRF).

PY - 2008

Y1 - 2008

N2 - We investigated the interfacial electronic structures of indium tin oxide (ITO)/molybdenum trioxide (MoO3) /N, N′ -bis(1-naphthyl)- N, N′ -diphenyl- 1, 1′ -biphenyl- 4, 4′ -diamine (NPB) using in situ ultraviolet and x-ray photoemission spectroscopy to understand the origin of hole injection improvements in organic light-emitting devices (OLEDs). Inserting a MoO3 layer between ITO and NPB, the hole injection barrier was remarkably reduced. Moreover, a gap state in the band gap of NPB was found which assisted the Ohmic hole injection at the interface. The hole injection barrier lowering and Ohmic injection explain why the OLED in combination with MoO3 showed improved performance.

AB - We investigated the interfacial electronic structures of indium tin oxide (ITO)/molybdenum trioxide (MoO3) /N, N′ -bis(1-naphthyl)- N, N′ -diphenyl- 1, 1′ -biphenyl- 4, 4′ -diamine (NPB) using in situ ultraviolet and x-ray photoemission spectroscopy to understand the origin of hole injection improvements in organic light-emitting devices (OLEDs). Inserting a MoO3 layer between ITO and NPB, the hole injection barrier was remarkably reduced. Moreover, a gap state in the band gap of NPB was found which assisted the Ohmic hole injection at the interface. The hole injection barrier lowering and Ohmic injection explain why the OLED in combination with MoO3 showed improved performance.

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DO - 10.1063/1.2965120

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SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043308

ER -

The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/ N, N′ -bis(1-naphthyl)- N, N′ -diphenyl- 1, 1′ -biphenyl- 4, 4′ -diamine interfaces

Abstract

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