@inproceedings{01396ac9e0ba4c4d9aeb271d209194d3,
title = "The NH3 nitridation effects on a Al2O3 passivation by atomic layer deposition (ALD) in the HfO2/GaAs systems",
abstract = "We investigated the nitridation effects on a passivating Al 2O3 layer formed by atomic layer deposition (ALD) process at the interface of HfO2/GaAs. Results reveal that formation of Ga-O is suppressed greatly when annealed under NH3 ambient for the HfD2/GaAs system. Moreover if the Al2O3 layer is thick enough, diffusion of Ga into the high-k dielectric is blocked effectively, even after heat treatment at 500°C Results of chemical analyses by x-ray photoelectron spectroscopy (XPS) and micro-structure analyses by high-resolution transmission electron microscopy (HR-TEM) are presented.",
author = "Cho, {Young Dae} and Suh, {Dong Chan} and Ko, {Dae Hong} and Yongshik Lee and Cho, {Mann Ho}",
year = "2011",
doi = "10.1149/1.3633030",
language = "English",
isbn = "9781566779036",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "145--148",
booktitle = "Physics and Technology of High-k Materials 9",
edition = "3",
note = "9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting ; Conference date: 10-10-2011 Through 12-10-2011",
}