The microstructural effect of chemically vapor infiltrated SiC whiskered thin film on the green body of SiC/C composites

Young Jin Lee; Sang Min Hwang; Doo Jin Choi; Sang Hwan Park; Hae Doo Kim

doi:10.1016/S0040-6090(02)00832-5

The microstructural effect of chemically vapor infiltrated SiC whiskered thin film on the green body of SiC/C composites

Young Jin Lee, Sang Min Hwang, Doo Jin Choi, Sang Hwan Park, Hae Doo Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

SiC films have been grown by a chemical vapor infiltration and deposition method. Different microstructures, so-called 'whisker-type' SiC films, have been fabricated, and the deposition and infiltration conditions of whisker growth have been studied. By connecting the SiC/C particles of the green body, fractural strength has been increased and, subsequently, the open pore structure of the body has been modified by an infiltrated whiskering process without a canning effect. Without using a metallic catalyst, silicon carbide whiskers have been obtained at an input gas ratio (H₂/MTS) above 20, and at temperatures below 1200 °C. The microstructure and composition of the whiskered SiC have been investigated by means of SEM and XPS.

Original language	English
Pages (from-to)	354-359
Number of pages	6
Journal	Thin Solid Films
Volume	420-421
DOIs	https://doi.org/10.1016/S0040-6090(02)00832-5
Publication status	Published - 2002 Dec 2

Bibliographical note

Funding Information:
This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(02)00832-5

Cite this

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title = "The microstructural effect of chemically vapor infiltrated SiC whiskered thin film on the green body of SiC/C composites",

abstract = "SiC films have been grown by a chemical vapor infiltration and deposition method. Different microstructures, so-called 'whisker-type' SiC films, have been fabricated, and the deposition and infiltration conditions of whisker growth have been studied. By connecting the SiC/C particles of the green body, fractural strength has been increased and, subsequently, the open pore structure of the body has been modified by an infiltrated whiskering process without a canning effect. Without using a metallic catalyst, silicon carbide whiskers have been obtained at an input gas ratio (H2/MTS) above 20, and at temperatures below 1200 °C. The microstructure and composition of the whiskered SiC have been investigated by means of SEM and XPS.",

author = "Lee, {Young Jin} and Hwang, {Sang Min} and Choi, {Doo Jin} and Park, {Sang Hwan} and Kim, {Hae Doo}",

note = "Funding Information: This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea. ",

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AU - Lee, Young Jin

AU - Hwang, Sang Min

AU - Choi, Doo Jin

AU - Park, Sang Hwan

AU - Kim, Hae Doo

N1 - Funding Information: This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

PY - 2002/12/2

Y1 - 2002/12/2

N2 - SiC films have been grown by a chemical vapor infiltration and deposition method. Different microstructures, so-called 'whisker-type' SiC films, have been fabricated, and the deposition and infiltration conditions of whisker growth have been studied. By connecting the SiC/C particles of the green body, fractural strength has been increased and, subsequently, the open pore structure of the body has been modified by an infiltrated whiskering process without a canning effect. Without using a metallic catalyst, silicon carbide whiskers have been obtained at an input gas ratio (H2/MTS) above 20, and at temperatures below 1200 °C. The microstructure and composition of the whiskered SiC have been investigated by means of SEM and XPS.

AB - SiC films have been grown by a chemical vapor infiltration and deposition method. Different microstructures, so-called 'whisker-type' SiC films, have been fabricated, and the deposition and infiltration conditions of whisker growth have been studied. By connecting the SiC/C particles of the green body, fractural strength has been increased and, subsequently, the open pore structure of the body has been modified by an infiltrated whiskering process without a canning effect. Without using a metallic catalyst, silicon carbide whiskers have been obtained at an input gas ratio (H2/MTS) above 20, and at temperatures below 1200 °C. The microstructure and composition of the whiskered SiC have been investigated by means of SEM and XPS.

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The microstructural effect of chemically vapor infiltrated SiC whiskered thin film on the green body of SiC/C composites

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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