The polycrystalline InN1-xOx films with different oxygen contents were grown by the reactive radio frequency (RF) magnetron sputtering on corning 1737 glass substrates. The chemical composition of each film was measured by the Rutherford back-scattering spectroscopy (RBS). The crystal structure and band gap of each film were examined with X-ray diffraction (XRD) and ultra violet (UV) light transmission spectroscopy, respectively. Results indicated the gradual shift from nitride to oxide as the oxygen incorporation in InN film increased. X-ray absorption spectra identified four possible phases in the film, indium-nitride, indium-oxide, atomic nitrogen and nitrogen-oxygen complex (In-N-O).
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics|
|Issue number||1 A|
|Publication status||Published - 2005 Jan|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)