The instability of nitrogen bonds in oxygen incorporated InN 1-xOx films

Yeonjin Yi; Sangwan Cho; Yongsuk Roh; Myungkeun Noh; Chung Nam Whang; Kwangho Jeong; Hyun Joon Shin

doi:10.1143/JJAP.44.17

The instability of nitrogen bonds in oxygen incorporated InN _1-xO_x films

Yeonjin Yi, Sangwan Cho, Yongsuk Roh, Myungkeun Noh, Chung Nam Whang, Kwangho Jeong, Hyun Joon Shin

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The polycrystalline InN_1-xO_x films with different oxygen contents were grown by the reactive radio frequency (RF) magnetron sputtering on corning 1737 glass substrates. The chemical composition of each film was measured by the Rutherford back-scattering spectroscopy (RBS). The crystal structure and band gap of each film were examined with X-ray diffraction (XRD) and ultra violet (UV) light transmission spectroscopy, respectively. Results indicated the gradual shift from nitride to oxide as the oxygen incorporation in InN film increased. X-ray absorption spectra identified four possible phases in the film, indium-nitride, indium-oxide, atomic nitrogen and nitrogen-oxygen complex (In-N-O).

Original language	English
Pages (from-to)	17-20
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	1 A
DOIs	https://doi.org/10.1143/JJAP.44.17
Publication status	Published - 2005 Jan

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "The polycrystalline InN1-xOx films with different oxygen contents were grown by the reactive radio frequency (RF) magnetron sputtering on corning 1737 glass substrates. The chemical composition of each film was measured by the Rutherford back-scattering spectroscopy (RBS). The crystal structure and band gap of each film were examined with X-ray diffraction (XRD) and ultra violet (UV) light transmission spectroscopy, respectively. Results indicated the gradual shift from nitride to oxide as the oxygen incorporation in InN film increased. X-ray absorption spectra identified four possible phases in the film, indium-nitride, indium-oxide, atomic nitrogen and nitrogen-oxygen complex (In-N-O).",

author = "Yeonjin Yi and Sangwan Cho and Yongsuk Roh and Myungkeun Noh and Whang, {Chung Nam} and Kwangho Jeong and Shin, {Hyun Joon}",

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T1 - The instability of nitrogen bonds in oxygen incorporated InN 1-xOx films

AU - Yi, Yeonjin

AU - Cho, Sangwan

AU - Roh, Yongsuk

AU - Noh, Myungkeun

AU - Whang, Chung Nam

AU - Jeong, Kwangho

AU - Shin, Hyun Joon

PY - 2005/1

Y1 - 2005/1

N2 - The polycrystalline InN1-xOx films with different oxygen contents were grown by the reactive radio frequency (RF) magnetron sputtering on corning 1737 glass substrates. The chemical composition of each film was measured by the Rutherford back-scattering spectroscopy (RBS). The crystal structure and band gap of each film were examined with X-ray diffraction (XRD) and ultra violet (UV) light transmission spectroscopy, respectively. Results indicated the gradual shift from nitride to oxide as the oxygen incorporation in InN film increased. X-ray absorption spectra identified four possible phases in the film, indium-nitride, indium-oxide, atomic nitrogen and nitrogen-oxygen complex (In-N-O).

AB - The polycrystalline InN1-xOx films with different oxygen contents were grown by the reactive radio frequency (RF) magnetron sputtering on corning 1737 glass substrates. The chemical composition of each film was measured by the Rutherford back-scattering spectroscopy (RBS). The crystal structure and band gap of each film were examined with X-ray diffraction (XRD) and ultra violet (UV) light transmission spectroscopy, respectively. Results indicated the gradual shift from nitride to oxide as the oxygen incorporation in InN film increased. X-ray absorption spectra identified four possible phases in the film, indium-nitride, indium-oxide, atomic nitrogen and nitrogen-oxygen complex (In-N-O).

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The instability of nitrogen bonds in oxygen incorporated InN _1-xO_x films

Abstract

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