The inlaid AI2O3 tunnel switch for ultrathin ferroelectric films

Quan Jiang, Hyun Ju Lee, Gun Hwan Kim, Cheol Seong Hwang

Research output: Contribution to journalArticlepeer-review

65 Citations (Scopus)


A study was conducted to investigate the formation of the invalid Al 2O3 tunnel switch for ultrathin ferroelectric (FE) films. It was demonstrated the specific interaction between ferroelectric PZT and interposed Al2O3 layers resulted in significant improvement in the ferroelectric performance of ultrathin polycrystalline PZT films. It was found that the new functionality of the thin dielectric layer was an ideal tunnel switch for ultrathin FE films. The dielectric layer opened up during FE switching, minimizing the adverse interference with the switching interaction. The thinner PZT film also showed better FE performance than the thicker film after all the adverse effects had been blocked by the interposed Al2O3 layer. The intact properties of the Al 2O3 layer were maintained after repeated cycling up to 107 times.

Original languageEnglish
Pages (from-to)2870-2875
Number of pages6
JournalAdvanced Materials
Issue number28
Publication statusPublished - 2009 Jul 27

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'The inlaid AI2O3 tunnel switch for ultrathin ferroelectric films'. Together they form a unique fingerprint.

Cite this