Abstract
The interface between Al and tris-(8-hydroquinoline) aluminum (Alq3) was studied using in situ medium energy ion scattering spectroscopy. We compared two interfaces of Al/LiF/Alq3 and Al/Alq3 with the elemental depth profile of each interface. The thin LiF changes the interfacial structures significantly; the excess Li in the LiF layer diffuses into Alq3 while F does not. In addition, the Al diffusion into the Alq3 layer during the initial stages of Al deposition is reduced significantly compared to the interface without the LiF interlayer. The LiF interlayer makes a more abrupt metal-organic interface, which would contribute to the efficiency and stability of the organic light-emitting device.
Original language | English |
---|---|
Pages (from-to) | 164-168 |
Number of pages | 5 |
Journal | Organic Electronics |
Volume | 11 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2010 Jan |
Bibliographical note
Funding Information:This work was supported by Korea Research Council of Fundamental Science and Technology (KRCF) through the KRISS project of “Development of Advanced Industrial Metrology” and a research project of the Korea Research Foundation (Grant No. 2009-0070876 ).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering