The influence of oxygen high pressure annealing on the performance and bias instability of amorphous Ge-In-Ga-O thin film transistors

Byung Du Ahn, Hyun Suk Kim, You Seung Rim, Jin Seong Park, Heon Je Kim

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	4132
Number of pages	4136
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	12
Publication status	Published - 2014 Oct

Cite this

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title = "The influence of oxygen high pressure annealing on the performance and bias instability of amorphous Ge-In-Ga-O thin film transistors",

author = "Ahn, {Byung Du} and Kim, {Hyun Suk} and Rim, {You Seung} and Park, {Jin Seong} and Kim, {Heon Je}",

year = "2014",

month = oct,

language = "English",

volume = "61",

pages = "4132",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - The influence of oxygen high pressure annealing on the performance and bias instability of amorphous Ge-In-Ga-O thin film transistors

AU - Ahn, Byung Du

AU - Kim, Hyun Suk

AU - Rim, You Seung

AU - Park, Jin Seong

AU - Kim, Heon Je

PY - 2014/10

Y1 - 2014/10

M3 - Article

SN - 0018-9383

VL - 61

SP - 4132

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -