The influence of in/Zn ratio on the performance and negative-bias instability of Hf-In-Zn-O thin-film transistors under illumination

Hyun Suk Kim; Joon Seok Park; Wan Joo Maeng; Kyoung Seok Son; Tae Sang Kim; Myungkwan Ryu; Jiyoul Lee; Jae Cheol Lee; Gunwoo Ko; Seongil Im; Sang Yoon Lee

doi:10.1109/LED.2011.2160836

The influence of in/Zn ratio on the performance and negative-bias instability of Hf-In-Zn-O thin-film transistors under illumination

Hyun Suk Kim, Joon Seok Park, Wan Joo Maeng, Kyoung Seok Son, Tae Sang Kim, Myungkwan Ryu, Jiyoul Lee, Jae Cheol Lee, Gunwoo Ko, Seongil Im, Sang Yoon Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The performance and stability of hafnium-indium-zinc-oxide (HIZO) thin-film transistors (TFTs) are evaluated with respect to the relative content in In and Zn cations. While devices that incorporate an active layer with an In-rich composition exhibit higher field-effect mobility values, they undergo larger negative shifts in V_th upon negative-bias illumination stress (NBIS). Density-of-states analyses suggest that a higher In/Zn ratio in the semiconductor results in larger defect states in the vicinity of the semiconductor/gate-insulator interface. Accordingly, these defect states may act as carrier traps that accelerate the degradation of HIZO TFTs upon NBIS.

Original language	English
Article number	5985469
Pages (from-to)	1251-1253
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	9
DOIs	https://doi.org/10.1109/LED.2011.2160836
Publication status	Published - 2011 Sept

Bibliographical note

Funding Information:
Manuscript received May 17, 2011; revised June 12, 2011; accepted June 22, 2011. Date of publication August 17, 2011; date of current version August 24, 2011. This work was supported in part by KOSEF under NRL Program 2011-0000375 and in part by the BK21 Project. The review of this letter was arranged by Editor W. T. Ng.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2160836

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title = "The influence of in/Zn ratio on the performance and negative-bias instability of Hf-In-Zn-O thin-film transistors under illumination",

abstract = "The performance and stability of hafnium-indium-zinc-oxide (HIZO) thin-film transistors (TFTs) are evaluated with respect to the relative content in In and Zn cations. While devices that incorporate an active layer with an In-rich composition exhibit higher field-effect mobility values, they undergo larger negative shifts in Vth upon negative-bias illumination stress (NBIS). Density-of-states analyses suggest that a higher In/Zn ratio in the semiconductor results in larger defect states in the vicinity of the semiconductor/gate-insulator interface. Accordingly, these defect states may act as carrier traps that accelerate the degradation of HIZO TFTs upon NBIS.",

author = "Kim, {Hyun Suk} and Park, {Joon Seok} and Maeng, {Wan Joo} and Son, {Kyoung Seok} and Kim, {Tae Sang} and Myungkwan Ryu and Jiyoul Lee and Lee, {Jae Cheol} and Gunwoo Ko and Seongil Im and Lee, {Sang Yoon}",

note = "Funding Information: Manuscript received May 17, 2011; revised June 12, 2011; accepted June 22, 2011. Date of publication August 17, 2011; date of current version August 24, 2011. This work was supported in part by KOSEF under NRL Program 2011-0000375 and in part by the BK21 Project. The review of this letter was arranged by Editor W. T. Ng.",

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doi = "10.1109/LED.2011.2160836",

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AU - Kim, Hyun Suk

AU - Park, Joon Seok

AU - Maeng, Wan Joo

AU - Son, Kyoung Seok

AU - Kim, Tae Sang

AU - Ryu, Myungkwan

AU - Lee, Jiyoul

AU - Lee, Jae Cheol

AU - Ko, Gunwoo

AU - Im, Seongil

AU - Lee, Sang Yoon

N1 - Funding Information: Manuscript received May 17, 2011; revised June 12, 2011; accepted June 22, 2011. Date of publication August 17, 2011; date of current version August 24, 2011. This work was supported in part by KOSEF under NRL Program 2011-0000375 and in part by the BK21 Project. The review of this letter was arranged by Editor W. T. Ng.

PY - 2011/9

Y1 - 2011/9

N2 - The performance and stability of hafnium-indium-zinc-oxide (HIZO) thin-film transistors (TFTs) are evaluated with respect to the relative content in In and Zn cations. While devices that incorporate an active layer with an In-rich composition exhibit higher field-effect mobility values, they undergo larger negative shifts in Vth upon negative-bias illumination stress (NBIS). Density-of-states analyses suggest that a higher In/Zn ratio in the semiconductor results in larger defect states in the vicinity of the semiconductor/gate-insulator interface. Accordingly, these defect states may act as carrier traps that accelerate the degradation of HIZO TFTs upon NBIS.

AB - The performance and stability of hafnium-indium-zinc-oxide (HIZO) thin-film transistors (TFTs) are evaluated with respect to the relative content in In and Zn cations. While devices that incorporate an active layer with an In-rich composition exhibit higher field-effect mobility values, they undergo larger negative shifts in Vth upon negative-bias illumination stress (NBIS). Density-of-states analyses suggest that a higher In/Zn ratio in the semiconductor results in larger defect states in the vicinity of the semiconductor/gate-insulator interface. Accordingly, these defect states may act as carrier traps that accelerate the degradation of HIZO TFTs upon NBIS.

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The influence of in/Zn ratio on the performance and negative-bias instability of Hf-In-Zn-O thin-film transistors under illumination

Abstract

Bibliographical note

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